IGBT. IXGH50N120C3 Datasheet

IXGH50N120C3 IGBT. Datasheet pdf. Equivalent

IXGH50N120C3 Datasheet
Recommendation IXGH50N120C3 Datasheet
Part IXGH50N120C3
Description IGBT
Feature IXGH50N120C3; Preliminary Technical Information GenX3TM 1200V IGBT High speed PT IGBTs for 20 - 50 kHz switching .
Manufacture IXYS
Datasheet
Download IXGH50N120C3 Datasheet




IXYS IXGH50N120C3
Preliminary Technical Information
GenX3TM 1200V IGBT
High speed PT IGBTs
for 20 - 50 kHz switching
IXGH50N120C3
VCES =
IC110
VCE(sat)
=
tfi(typ) =
1200V
50A
4.2V
64ns
Symbol
VCES
VCGR
V
GES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
T
stg
Md
TL
T
SOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TJ = 125°C, RG = 3Ω
Clamped inductive load @VCE1200V
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
75 A
50 A
250 A
40 A
750 mJ
ICM = 100
A
460
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
W
°C
°C
°C
Nm/lb.in.
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
I
GES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
3.0
V
5.0 V
100 μA
2 mA
±100 nA
4.2 V
2.6 V
TO-247 (IXGH)
G
CE
TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard packages:
JEDEC TO-247AD
z IGBT and anti-parallel FRED in one
package
z MOS Gate turn-on
- drive simplicity
Applications
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switch-mode and resonant-mode
power supplies
© 2008 IXYS CORPORATION, All rights reserved
DS99996(06/08)



IXYS IXGH50N120C3
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
g
fs
IC = 40A, VCE = 10V, Note 1
Cies
C
oes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 50A, VGE = 15V, VCE = 0.5 VCES
Q
gc
td(on)
tri
Eon
td(off)
t
fi
Inductive load, TJ = 25°C
IC = 40A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 1
E
off
t
d(on)
t
ri
Eon
td(off)
tfi
E
off
Inductive
load,
T
J
=
125°C
IC = 40A, VGE = 15V
VCE = 600V, RG = 2Ω
Note 1
R
thJC
RthCK
Characteristic Values
Min. Typ. Max.
24 40
S
4190
330
130
pF
pF
pF
196 nC
24 nC
84 nC
20 ns
34 ns
2.2 mJ
123 ns
64 ns
0.63 1.2 mJ
20 ns
35 ns
4.3 mJ
170 ns
315 ns
2.1 mJ
0.27 °C/W
0.21 °C/W
IXGH50N120C3
TO-247 (IXGH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537



IXYS IXGH50N120C3
Fig. 1. Output Characteristics
@ 25ºC
100
VGE = 15V
90 13V
11V
80
9V
70
60
50 7V
40
30
20
10 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
100
VGE = 15V
90 13V
80 11V
9V
70
60
7V
50
40
30
20
5V
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE - Volts
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
5
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 100A
50A
25A
6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH50N120C3
275
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
5V
3 6 9 12 15 18 21 24 27
VCE - Volts
30
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
25
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
I C = 100A
VGE = 15V
I C = 50A
I C = 25A
50 75 100 125
TJ - Degrees Centigrade
150
90
80
70
60
50
40
30
20
10
0
4.0
Fig. 6. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
4.5 5.0 5.5 6.0 6.5 7.0
VGE - Volts
7.5







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