Power MOSFET. RP1800 Datasheet

RP1800 MOSFET. Datasheet pdf. Equivalent

RP1800 Datasheet
Recommendation RP1800 Datasheet
Part RP1800
Description P-Channel Trench Power MOSFET
Feature RP1800; Preliminary RP1800 P-Channel Trench Power MOSFET with Ultra-low Reverse Leakage Current General D.
Manufacture RichPower
Datasheet
Download RP1800 Datasheet




RichPower RP1800
Preliminary
RP1800
P-Channel Trench Power MOSFET with Ultra-low Reverse
Leakage Current
General Description
Features
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to
linear mode applications.
2%
One Chip Solution
Low Chargeable Voltage (4.3V)
Ultra-low Reverse Leakage Current (<10nA@25°C)
Low Reverse Leakage Current in High Temperature
(<1µA@125°C)
Ordering Information
Pin Configurations
RP1800A/B/C
Package Type
QW: WDFN-6L 2x2 (W-Type) (RP1800A)
QW: WDFN-8L 3x2 (W-Type) (RP1800B)
QW: WDFN-8L 3x2 (W-Type) (Without
Exposed Pad) (RP1800C)
Operating Temperature Range
G: Green ( Halogen Free with Commer-
cial Standard
Note :
Richpower Green products are :
RoHS compliant and compatible with the current
requirements of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
(TOP VIEW)
NC 1
NC 2
NC 3
6 DRAIN
5 GATE
4 SOURCE
WDFN-6L 2x2 (RP1800AGQW)
NC 1
NC 2
SOURCE 3
GATE 4
WDFN-8L 3x2 (RP1800BGQW)
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
Marking Information
For marking information, contact our sales representative
directly or through a Richpower distributor located in your
area.
NC 1
NC 2
SOURCE 3
GATE 4
8 DRAIN
7 DRAIN
6 DRAIN
5 DRAIN
WDFN-8L 3x2 (Without Exposed Pad) (RP1800CGQW)
RP1800-05P Dec 2010
1



RichPower RP1800
RP1800
Preliminary
Absolute Maximum Ratings
(TA = 25°C , unless otherwise specified)
Symbol
Parameter
VDSS
VGSS
ID
VR
PD
TJ
MOSFET DRAIN-SOURCE Voltage
MOSFET GATE-SOURCE Voltage
Drain Current-Continuous
Reverse Voltage
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Ratings
-16
±7
-2.2
7
1.5
-55 to +150
Units
V
V
A
V
W
ºC
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
Ratings
80
Units
ºC/W
Electrical Characteristics
(TA = 25°C , unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS DRAIN-SOURCE Breakdown Voltage VGS = 0V, ID = -250µA -16
--
BVDSS
TJ
Breakdown Voltage Temperature
Coeff icient
ID = -250µA,
Referenced to 25ºC
-- -2
-- V
-- mV/ ºC
IDSS Zero Gate Voltage Drain Current
VDS = -14V, VGS = 0V -- -- -1 µA
IGSS
Gate-Body Leakage
VGS = ±7V, VS = 0V,
Drain pin Floating
-- -- ±100 nA
IR Reverse Leakage
On Characteristics
VR = 5V, TJ = 25ºC
VR = 5V, TJ = 125ºC
-- 0.004 1
-- 0.2 --
µA
VGS(TH) GATE Threshold Voltage
VDS= VGS, ID = -250µA -1.4 -2 -2.6
V
VGS(TH)
TJ
GATE Threshold Voltage Temperature ID = -250µA,
Coeff icient
Referenced to 25ºC
-- 3 -- mV/ ºC
RDS(ON)
Static DRAIN-SOURCE
On-Resistance
VGS = -4.5V, ID = -0.5A -- 250 400 mΩ
2 RP1800-05P Dec 2010



RichPower RP1800
Preliminary
RP1800
Typical Operating Characteristics
DRAIN-to-SOURCE Resistance vs.
GATE-to-SOURCE Voltage
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
2.5
3 3.5 4 4.5 5 5.5 6 6.5
VGS, GATE-to-SOURCE Voltage (V)
7
DRAIN-to-SOURCE Resistance (Normalized) vs.
Junction Temperature
1.4
1.3
1.2
1.1
1
0.9
0.8
-50
-25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Reverse Leakage Current vs. Reverse Voltage
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VR, Reverse Voltage (V)
Reverse Leakage Current vs. Junction Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-50
-25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RP1800-05P Dec 2010
3







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