P-Channel Trench Power MOSFET
Preliminary
RP1800
P-Channel Trench Power MOSFET with Ultra-low Reverse Leakage Current
General Description
Features...
Description
Preliminary
RP1800
P-Channel Trench Power MOSFET with Ultra-low Reverse Leakage Current
General Description
Features
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to
linear mode applications.
2%
One Chip Solution Low Chargeable Voltage (4.3V) Ultra-low Reverse Leakage Current (<10nA@25°C) Low Reverse Leakage Current in High Temperature (<1µA@125°C)
Ordering Information
Pin Configurations
RP1800A/B/C
Package Type QW: WDFN-6L 2x2 (W-Type) (RP1800A) QW: WDFN-8L 3x2 (W-Type) (RP1800B) QW: WDFN-8L 3x2 (W-Type) (Without
Exposed Pad) (RP1800C)
Operating Temperature Range G: Green ( Halogen Free with Commercial Standard
Note : Richpower Green products are :
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
(TOP VIEW)
NC 1 NC 2 NC 3
6 DRAIN 5 GATE 4 SOURCE
WDFN-6L 2x2 (RP1800AGQW)
NC 1 NC 2 SOURCE 3 GATE 4
WDFN-8L 3x2 (RP1800BGQW)
8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN
Marking Information
For marking information, contact our sales representative directly or through a Richpower distributor located in your area.
NC 1 NC 2 SOURCE 3 GATE 4
8 DRAIN 7 DRAIN 6 DRAIN 5 DRAIN
WDFN-8L 3x2 (Without Exposed Pad) (RP1800CGQW)
RP1...
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