Junction FET. TF410 Datasheet

TF410 FET. Datasheet pdf. Equivalent

TF410 Datasheet
Recommendation TF410 Datasheet
Part TF410
Description N-Channel Silicon Junction FET
Feature TF410; Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction.
Manufacture Sanyo
Datasheet
Download TF410 Datasheet




Sanyo TF410
Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Converter,
Infrared Sensor Applications
Applications
Impedance conversion, infrared sensor applications
Features
Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
40
--40
10
1
30
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
0.11
0 to 0.02
1
0.175
2
0.15
1 2 1 : Source
2 : Drain
3 : Gate
3 SANYO : USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
BTL
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1 2 Top view
12
http://semicon.sanyo.com/en/network
22912GB TKIM TC-00002703 No. A2007-1/3



Sanyo TF410
Electrical Characteristics at Ta=25°C
TF410
Parameter
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
Ciss
Crss
Conditions
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1μA
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
min
--40
Ratings
typ
50
0.05
--1.4
0.11
0.7
0.3
max
--500
--4.0
130
Unit
V
pA
V
μA
mS
pF
pF
ID -- VDS
120
100
VGS=0V
80
--0.2V
60
--0.4V
40
--0.6V
20 --0.8V
--1.0V
0
01234
120 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V
VDS=10V
5
IT16761
100
80
60
40 75°C
20
0
--2.0
--1.5
--1.0
--0.5
0.14
Gate-to-Source
| yfs |
V--oltaIgDeS, VSGS
--
V
VDS=10V
0.13 VGS=0V
f=1kHz
0.12
0
IT16764
0.11
0.10
0.09
0.08
0.07
0.06
40
60 80 100 120 140
Drain Current, IDSS -- μA
IT16766
120
100
80
60
40
20
0
0
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
40
1.0
7
5
ID -- VDS
VGS=0V
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
5 10 15 20 25 30
Drain-VtoG-SSou(orcfef)Vo-l-tagIeD, VSDSS -- V IT16762
VDS=10V
ID=1.0μA
60 80 100 120 140
Drain Current,
Ciss --
IDVSDSS--
μA
IT16765
VGS=0V
f=1MHz
3
2
0.1
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT16767
No. A2007-2/3



Sanyo TF410
TF410
1.0 Crss -- VDS
VGS=0V
f=1MHz
7
5
3
2
0.1
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Drain-to-Source Voltage, VDS -- V IT16768
PD -- Ta
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT16778
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to change without notice.
PS No. A2007-3/3







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