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CDBUR54-HF Dataheets PDF



Part Number CDBUR54-HF
Manufacturers Comchip
Logo Comchip
Description SMD Schottky Barrier Diode
Datasheet CDBUR54-HF DatasheetCDBUR54-HF Datasheet (PDF)

SMD Schottky Barrier Diode CDBUR54-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features -Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. 0603/SOD-523F 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) Mechanical data -Case: 0603/SOD-523F standard package, molded plastic. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band.

  CDBUR54-HF   CDBUR54-HF


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SMD Schottky Barrier Diode CDBUR54-HF Io = 200 mA VR = 30 Volts RoHS Device Halogen Free Features -Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. 0603/SOD-523F 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) Mechanical data -Case: 0603/SOD-523F standard package, molded plastic. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BF -Mounting position: Any -Weight: 0.003 gram(approx.). 0.028(0.70) Typ. Dimensions in inches and (millimeter) Maximum Rating (at TA=25OC unless otherwise noted) Parameter Peak reverse voltage Reverse voltage Conditions Symbol Min Typ Max Unit VRM 30 V VR 30 V RMS reverse voltage VR(RMS) 21 V Average forward rectified current IO 200 mA Repetitive peak forward current Forward current,surge peak Power dissipation 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) IFRM IFSM PD 0.3 A 0.6 A 150 mW Storage temperature TSTG -65 +125 OC Junction temperature Tj +125 OC Electrical Characteristics (at TA=25OC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Forward voltage Reverse current Capacitance between terminals IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V f = 1 MHz, and 1 VDC reverse voltage VF IR CT 0.24 0.32 0.4 0.5 1 2 10 V uA pF Reverse recovery time IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm Trr 5 nS QW-G1018 Comchip Technology CO., LTD. REV:A Page 1 Forward current (mA ) SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBUR54-HF) Fig. 1 - Forward characteristics 1000 100 10 1 O C O C O C O C -25 25 75 125 0.1 0 0.2 0.4 0.6 Forward voltage (V) 0.8 Reverse current ( A ) Fig. 2 - Reverse characteristics 1m 100u O 125 C 10u 1u 100n 10n 0 O 75 C O 25 C O -25 C 5 10 15 20 25 30 Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics 14 f=1MHz 12 O TA=25 C 10 8 6 4 2 0 0 5 10 15 20 25 30 Reverse voltage (V) Average forward current(%) Fig.4 - Current derating curve 120 Mounting on glass epoxy PCBs 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient temperature (OC) Capacitance between terminals (PF) QW-G1018 Comchip Technology CO., LTD. REV:A Page 2 SMD Schottky Barrier Diode Reel Taping Specification P0 d P1 E Index hole F BW Polarity PA T C 120o D2 D1 D End Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... W1 Leader ....... ....... 10 pitches (min) Start Direction of Feed 0603 (SOD-523F) SYMBOL (mm) (inch) A 1.00 ± 0.10 0.039 ± 0.004 BC 1.85 ± 0.10 1.00 ± 0.10 0.073 ± 0.004 0.039± 0.004 d 1.55 ± 0.05 0.061 ± 0.002 D 178 ± 1 7.008 ± 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 ± 0.20 0.512 ± 0.008 0603 (SOD-523F) SYMBOL (mm) (inch) E F P P0 P1 T W 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.05 0.23 ± 0.05 8.00 ± 0.20 0.069 ± 0.004 0.138 ± 0.002 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.009 ± 0.002 0.315 ± 0.008 W1 13.5 MAX. 0.531 MAX. QW-G1018 Comchip Technology CO., LTD. REV:A Page 3 SMD Schottky Barrier Diode Marking Code Park Number CDBUR54-HF Marking Code BF Suggested PAD Layout SIZE A B C D E 0603/SOD-523F (mm) (inch) 1.25 0.049 0.60 0.024 1.00 0.039 1.85 0.073 0.65 0.026 Standard Package Case Type Qty per Reel Reel Size (Pcs) (inch) 0603/SOD-523F 4000 7 BF D A E C B QW-G1018 Comchip Technology CO., LTD. REV:A Page 4 .


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