MOSFET. DMC3032LSD Datasheet

DMC3032LSD MOSFET. Datasheet pdf. Equivalent

DMC3032LSD Datasheet
Recommendation DMC3032LSD Datasheet
Part DMC3032LSD
Description MOSFET
Feature DMC3032LSD; NEW PRODUCT DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS.
Manufacture Diodes
Datasheet
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Diodes DMC3032LSD
DMC3032LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
RDS(on) max
32m@ VGS = 10V
Q1 30V
46m@ VGS = 4.5V
39m@ VGS = -10V
Q2 -30V
53m@ VGS = -4.5V
ID Max
TA = +25C
(Notes 5 & 7)
8.1A
6.1A
-7A
-5.6A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Power Management Functions
Analog Switch
Load Switch
Features
Low On-Resistance
N-Channel: 32m@ 10V
46m@ 4.5V
P-Channel: 39m@ 10V
53m@ 4.5V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208 e3
Marking Information (See Page 2)
Ordering Information
Weight: 0.072 grams (approximate)
Top View
SO-8
S2 D2
G2 D2
S1 D1
G1 D1
Top View
D2 D1
G2 G1
S2
N-Channel MOSFET
S1
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC3032LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
1 of 9
www.diodes.com
July 2014
© Diodes Incorporated



Diodes DMC3032LSD
DMC3032LSD
Marking Information
85
C3032LD
YY WW
14
Chengdu A/T Site
85
C3032LD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
C3032LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Maximum Ratings N-CHANNEL – Q1 @TA = +25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
8.1
5.1
25
Unit
V
V
A
A
Maximum Ratings P-CHANNEL – Q2 @TA = +25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
-30
±20
-7.0
-4.5
-25
Unit
V
V
A
A
Thermal Characteristics @TA = +25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
2 of 9
www.diodes.com
July 2014
© Diodes Incorporated



Diodes DMC3032LSD
DMC3032LSD
Electrical Characteristics N-CHANNEL – Q1 @TA = +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
-
-
--
-1
- ±100
VGS(th)
RDS (ON)
|Yfs|
VSD
1
-
-
-
1.45
23
32
7.6
0.7
2.1
32
46
-
1
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
- 404.5 -
- 51.8 -
- 45.1 -
- 1.5 -
- 9.2 -
- 1.2 -
- 1.8 -
- 3.4 -
- 6.18 -
- 13.92 -
- 2.84 -
Unit Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, IC = 250µA
m
VGS = 10V, IC = 7A
VGS = 4.5V, IC = 5.6A
S VDS = 5V, IC = 7A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VGS = 10V, VDS = 15V,
ID = 5.8A
ns
ns VGS = 10V, VDS = 15V,
ns RG = 3, RL = 2.6
ns
20
16 VGS = 8.0V
VGS = 4.5V
12
8 VGS = 3.0V
4
0
VGS = 2.0V
VGS = 2.5V
012 345
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
20
16 VDS = 5V
12
8
TA = 150°C
4 TA = 125°C
TA = 85°C
TA = 25°C
0 TA = -55°C
01 2 34
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMC3032LSD
Document number: DS32153 Rev. 2 - 2
3 of 9
www.diodes.com
July 2014
© Diodes Incorporated







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