P-Channel MOSFET. DMG9933USD Datasheet

DMG9933USD MOSFET. Datasheet pdf. Equivalent

DMG9933USD Datasheet
Recommendation DMG9933USD Datasheet
Part DMG9933USD
Description Dual P-Channel MOSFET
Feature DMG9933USD; NEW PRODUCT Product Summary V(BR)DSS -20V RDS(on) max 75mΩ @ VGS = -4.5V 110mΩ @ VGS = -2.5V ID .
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Datasheet
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Diodes DMG9933USD
Product Summary
V(BR)DSS
-20V
RDS(on) max
75m@ VGS = -4.5V
110m@ VGS = -2.5V
ID max
TA = +25°C
-4.6A
-2.9A
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
DMG9933USD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
Top View
SO-8
S1 D1
G1 D1
S2 D2
G2 D2
Top View
Internal Schematic
D1 D2
G1 G2
S1
P-Channel MOSFET
S2
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMG9933USD-13
Case
SO-8
Packaging
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
G9933UD
YY WW
14
Chengdu A/T Site
DMG9933USD
Document number: DS32085 Rev. 3 - 2
85
G9933UD
YY WW
14
= Manufacturer’s Marking
G9933UD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Shanghai A/T Site
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Diodes DMG9933USD
DMG9933USD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Pulsed Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-4.6
-3
-20
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
PD
RθJA
TJ, TSTG
Value
1.15
109
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Min
-20
-0.45
Typ
55
76
10
-0.8
608.4
81.5
72.4
44.91
6.5
0.9
1.5
12.45
10.29
46.52
22.19
Max
-1
±100
-1.1
75
110
-1.2
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -16V, VGS = 0V
nA VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
m
VGS = -4.5V, ID = -4.8A
VGS = -2.5V, ID = -1A
S VDS = -9V, ID = -3.4A
V VGS = 0V, IS = -2A
pF
pF
pF
VDS = -6V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = -10V, VGS = -4.5V,
ID = -3.2A
ns
ns VDS = -10V, VGS = -4.5V,
ns RL = 10, RG = 1, ID = -1A
ns
DMG9933USD
Document number: DS32085 Rev. 3 - 2
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Diodes DMG9933USD
10
VGS = -8.0V
8
6
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
10
8 VDS = -5V
6
DMG9933USD
4
2 VGS = -1.5V
0
0
0.25
VGS = -1.2V
0.5 1 1.5 2 2.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
3
0.20
0.15
0.10
0.05
-VGS = 1.8V
-VGS = 2.5V
-VGS = 4.5V
0
0.1
1.7
1
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
10
1.5
1.3
1.1
-VGS = 5.0V
-ID = 10A
0.9
0.7 -VGS = 2.5V
-ID = 5.0A
0.5
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
4
2
0
0
0.16
0.12
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3
VGS = 4.5V
0.08
0.04
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
0.16
2 4 6 8 10
-ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.12
0.08
-VGS = 2.5V
-ID = 5.5A
0.04
-VGS = 5.0V
-ID = 10A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG9933USD
Document number: DS32085 Rev. 3 - 2
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