MODE MOSFET. DMT6004SCT Datasheet

DMT6004SCT MOSFET. Datasheet pdf. Equivalent

DMT6004SCT Datasheet
Recommendation DMT6004SCT Datasheet
Part DMT6004SCT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Feature DMT6004SCT; DMT6004SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) max 3.65mΩ @ V.
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Diodes DMT6004SCT
DMT6004SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) max
3.65mΩ @ VGS = 10V
ID
TC = +25°C
(Note 9)
100A
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low Input Capacitance
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO220-3
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
TO220-3
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT6004SCT
Case
TO220-3
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T6004S
YYWW
= Manufacturer’s Marking
T6004S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 15 = 2015)
WW or WW = Week Code (01 to 53)
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
1 of 6
www.diodes.com
April 2016
© Diodes Incorporated



Diodes DMT6004SCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current, L=0.2mH
Avalanche Energy, L=0.2mH
TC = +25°C
(Note 9)
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMT6004SCT
Value
60
±20
100
100
100
180
45
200
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
60
2
Typ
3.1
4556
1383
105
0.7
95.4
21.6
20.4
14.3
99.1
40
17.6
50.5
80.8
Max
1
±100
4
3.65
1.3
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on infinite heat sink.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 48V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250 A
mVGS = 10V, ID = 100A
V VGS = 0V, IS = 100A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 30V, ID = 90A,
VGS = 10V
ns
VDD = 30V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC IF = 48A, di/dt = 100A/µs
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
2 of 6
www.diodes.com
April 2016
© Diodes Incorporated



Diodes DMT6004SCT
150
120
90
60
VGS = 10.0V
VGS = 8.0V
VGS = 6.0V
VGS = 5.0V
VGS = 4.5V
30 VGS = 4.0V
0
0
0.007
0.006
0.005
VGS = 3.5V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
0.004
0.003
VGS = 10.0V
0.002
0.001
0
0 30 60 90 120
0.007
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 10V
0.006
150oC
150
0.005
0.004
125oC
85oC
0.003
25oC
0.002
-55oC
0.001
0 30 60 90 120 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current
and Temperature
30
VDS = 5V
25
DMT6004SCT
20
15
10
5
0
2
0.02
150oC
125oC
85oC
25oC
-55oC
2.5 3 3.5 4 4.5 5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.015
ID = 100mA
0.01
0.005
ID = 20A
0
0 4 8 12 16 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
1.8
1.6
VGS = 10V, ID = 100A
1.4
1.2
1
VGS = 10V, ID = 20A
0.8
0.6
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 6 On-Resistance Variation with
Temperature
150
DMT6004SCT
Document number: DS38565 Rev. 1 - 2
3 of 6
www.diodes.com
April 2016
© Diodes Incorporated







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