N-Channel MOSFET. DMTH3004LK3 Datasheet

DMTH3004LK3 MOSFET. Datasheet pdf. Equivalent

DMTH3004LK3 Datasheet
Recommendation DMTH3004LK3 Datasheet
Part DMTH3004LK3
Description N-Channel MOSFET
Feature DMTH3004LK3; Green DMTH3004LK3 30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON.
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Datasheet
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Diodes DMTH3004LK3
Green DMTH3004LK3
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
4m@VGS = 10V
7m@VGS = 4.5V
ID max
TC = +25°C
75A
75A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
DC-DC Converters
Backlighting
Features
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Weight: 0.315 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMTH3004LK3-13
Case
TO252
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H3004L
YYWW
=Manufacturers Marking
H3004L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
1 of 6
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH3004LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Steady
State
Pulsed Drain Current (380μs Pulse, Duty Cycle=1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L=5mH
Avalanche Energy (Note 7) L=5mH
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
IAS
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RJA
PD
RJA
RJC
TJ, TSTG
DMTH3004LK3
Value
30
+20
-16
75
75
21
17
160
3
10.7
287
Unit
V
V
A
A
A
A
A
mJ
Value
1.9
80
3
50
1.4
-55 to +175
Unit
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
Min
30
-
-
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3.3
5.5
0.75
2370
1360
240
0.6
20
44
7
8
6.2
4.3
21
8
25
37
Max
-
10
100
-100
3
4
7
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
pF
VDS =15V, VGS = 0V,
f = 1MHz
pF
VDS =0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 15V, ID =20A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 0.75Ω, RG = 3Ω, ID =20A
ns
ns
nC
IF =15A, di/dt=500A/μs
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
2 of 6
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH3004LK3
DMTH3004LK3
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0
0.007
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
VGS = 2.8V
VGS = 2.2V
VGS = 2.5V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.006
0.005
VGS = 4.5V
0.004
0.003
VGS = 10V
0.002
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
30
VDS = 5V
25
20
15
10
5
0
0
150
175
125
85
25
-55
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 20A
2 4 6 8 10 12 14
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
16
0.006
VGS = 10V
0.005
0.004
0.003
150
175
125
85
25
-55
2.5
2
1.5
1
0.5
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
0.002
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMTH3004LK3
Document number: DS37859 Rev. 3 - 2
3 of 6
www.diodes.com
November 2015
© Diodes Incorporated







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