MODE MOSFET. DMTH3004LPS Datasheet

DMTH3004LPS MOSFET. Datasheet pdf. Equivalent

DMTH3004LPS Datasheet
Recommendation DMTH3004LPS Datasheet
Part DMTH3004LPS
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Feature DMTH3004LPS; ADVANCE INNEFWORPRMOADTIUOCNT Product Summary BVDSS 30V RDS(ON) Max 3.8mΩ @ VGS = 10V 6mΩ @ VGS =.
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Datasheet
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Diodes DMTH3004LPS
Product Summary
BVDSS
30V
RDS(ON) Max
3.8mΩ @ VGS = 10V
6mΩ @ VGS = 4.5V
ID Max
TC = +25°C
145A
115A
Description and Applications
Green DMTH3004LPS
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Features and Benefits
Low RDS(ON) Minimizes On-State Losses
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
100% Unclamped Inductive Switching Ensures More Reliability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH3004LPSQ)
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI®5060-8
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMTH3004LPS-13
Case
POWERDI®5060-8
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H3004LS
YY WW
= Manufacturer’s Marking
H3004LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
SS SG
DMTH3004LPS
Document number: DS37860 Rev. 2 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated



Diodes DMTH3004LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current, VGS = 10V (Note 5)
Continuous Drain Current, VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH3004LPS
Value
30
+20
-16
22
18
145
120
3
180
27
110
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
TA = +25°C
(Note 5)
TC = +25°C
Steady State
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
3.2
136
47
1.1
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
Min
30
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
Typ Max
——
1
±100
3.3
5
0.70
2370
1360
240
0.7
43.7
6.9
8
6.2
4.2
21
8
25
37
3
3.8
6
1
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 20A
ns
VDD = 15V, VGS = 10V,
RG = 3, RL = 0.75
ns
nC
IF = 15A, di/dt = 500A/μs
Notes:
5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate. RθJC is guaranteed by design
while RθJA is determined by the user’s board design.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMTH3004LPS
Document number: DS37860 Rev. 2 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated



Diodes DMTH3004LPS
DMTH3004LPS
30.0
25.0
20.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
30
VDS = 5V
25
20
15.0
10.0
5.0
0.0
0
VGS = 2.8V
VGS = 2.2V
VGS = 2.5V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
15
10
5
0
0
150
175
125
85
25
-55
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.006
0.005
VGS = 4.5V
0.004
0.003
0.002
VGS = 10V
0.001
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.006
0.005
VGS = 10V
150
175
0.004
0.003
125
85
25
-55
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 20A
2 4 6 8 10 12 14
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
16
2.5
2
VGS = 10V, ID = 20A
1.5
1 VGS = 4.5V, ID = 15A
0.5
0.002
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
DMTH3004LPS
Document number: DS37860 Rev. 2 - 2
3 of 7
www.diodes.com
December 2015
© Diodes Incorporated







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