N-Channel MOSFET. DMTH3004LPSQ Datasheet

DMTH3004LPSQ MOSFET. Datasheet pdf. Equivalent

DMTH3004LPSQ Datasheet
Recommendation DMTH3004LPSQ Datasheet
Part DMTH3004LPSQ
Description N-Channel MOSFET
Feature DMTH3004LPSQ; ADVANCE INNEFWORPRMOADTIUOCNT Green DMTH3004LPSQ 30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerD.
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Datasheet
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Diodes DMTH3004LPSQ
Green DMTH3004LPSQ
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
Features and Benefits
BVDSS
30V
RDS(ON) Max
3.8mΩ @ VGS = 10V
6mΩ @ VGS = 4.5V
ID Max
TC = +25°C
145A
115A
Description and Applications
Low RDS(ON) Minimizes On-State Losses
Excellent Qgd x RDS(ON) Product (FOM)
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
100% Unclamped Inductive Switching Ensures More Reliability
Rated to +175°C Ideal for High Ambient Temperature
Environments
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
POWERDI®5060-8
Case: POWERDI®5060-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Pin1
SD
SD
SD
GD
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMTH3004LPSQ-13
Case
POWERDI®5060-8
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H3004LS
YY WW
= Manufacturer’s Marking
H3004LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
SS SG
PowerDI is a registered trademark of Diodes Incorporated.
DMTH3004LPSQ
Document number: DS38443 Rev. 1 - 2
1 of 7
www.diodes.com
December 2015
© Diodes Incorporated



Diodes DMTH3004LPSQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
TA = +25°C
TA = +100°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH3004LPSQ
Value
30
+20
-16
22
16
145
103
100
180
27
110
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
136
47
1.1
-55 to +175
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 9)
Output Capacitance (Note 9)
Reverse Transfer Capacitance (Note 9)
Gate Resistance
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IDSS
IGSS
Min
30
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
1
0.14
Typ
1.6
3.3
5
0.70
2370
1360
240
0.7
43.7
6.9
8
6.2
4.2
21
8
25
37
Max
1
10
±100
3
3.8
6
1
1.75
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
μA VDS = 24V, VGS = 0V
TJ = +125°C
nA VGS = +20V, VDS = 0V
VGS = -16V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
VGS = 4.5V, ID = 7A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 15V, ID = 20A
ns
VDD = 15V, VGS = 10V,
RG = 3, RL = 0.75
ns
nC
IF = 15A, dI/dt = 500A/μs
Notes:
6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air
conditions whilst operating in a steady state.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
PowerDI is a registered trademark of Diodes Incorporated.
DMTH3004LPSQ
Document number: DS38443 Rev. 1 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated



Diodes DMTH3004LPSQ
30.0
25.0
20.0
VGS = 10.0V
VGS = 4.5V
VGS = 4.0V
VGS = 3.5V
VGS = 3.0V
30
VDS = 5V
25
20
DMTH3004LPSQ
15.0
10.0
5.0
0.0
0
0.007
VGS = 2.8V
VGS = 2.2V
VGS = 2.5V
0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0.006
0.005
VGS = 4.5V
0.004
0.003
VGS = 10V
0.002
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
15
10
5
0
0
150
175
125
85
25
-55
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 20A
2 4 6 8 10 12 14
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
16
0.006
0.005
VGS = 10V
0.004
0.003
150
175
125
85
25
-55
2.5
2
1.5
1
0.5
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 15A
0.002
0 5 10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
PowerDI is a registered trademark of Diodes Incorporated.
DMTH3004LPSQ
Document number: DS38443 Rev. 1 - 2
3 of 7
www.diodes.com
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Junction
Temperature
December 2015
© Diodes Incorporated







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