N-Channel MOSFET. DMTH4005SPS Datasheet

DMTH4005SPS MOSFET. Datasheet pdf. Equivalent

DMTH4005SPS Datasheet
Recommendation DMTH4005SPS Datasheet
Part DMTH4005SPS
Description N-Channel MOSFET
Feature DMTH4005SPS; NEW PRODUCT Green DMTH4005SPS 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summa.
Manufacture Diodes
Datasheet
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Diodes DMTH4005SPS
Green DMTH4005SPS
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
BVDSS
40V
RDS(ON) Max
3.7mΩ @ VGS = 10V
ID
TC = +25°C
(Note 9)
100A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Rated to +175°C Ideal For High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
And Robust End Application
Low RDS(ON) Minimizes Power Losses
Low Qg Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4005SPSQ)
Engine Management Systems
Body Control Electronics
DC-DC Converters
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI®5060-8
Pin1
SD
SD
SD
GD
Top View
Bottom View
Ordering Information (Note 4)
Internal Schematic
Top View
Pin Configuration
Notes:
Part Number
DMTH4005SPS-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DDDD
H4005SS
YY WW
= Manufacturer’s Marking
H4005SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 to 53)
SS SG
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4005SPS
Document number: DS38150 Rev. 2 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH4005SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Continuous Drain Current (Notes 6 & 9)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.6mH
Avalanche Energy, L=0.6mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH4005SPS
Value
40
±20
20.9
17.5
100
100
100
150
21
132.3
Unit
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA= +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.6
57
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
Typ Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
BVDSS 40 — —
IDSS — — 1
IGSS — — ±100
VGS(TH)
RDS(ON)
VSD
2
2.9
0.88
4
3.7
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
3062
902.2
179.2
0.67
49.1
10.3
13
8.7
6.8
18.6
7.3
31.8
26.5
V VGS = 0V, ID = 1mA
μA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 50A
V VGS = 0V, IS = 50A
pF
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDD = 20V, ID = 50A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
ns
nC IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH4005SPS
Document number: DS38150 Rev. 2 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH4005SPS
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0
5.00
VGS = 10.0V
VGS = 6.0V
VGS = 5.0V
VGS = 4.5V
VGS = 3.8V
VGS = 4.0V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3
30
VDS = 6.0V
25
DMTH4005SPS
20
15
10
5
0
2
20
150
175
125
85
25
-55
2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
5
4.50
4.00
3.50
3.00
2.50
VGS = 6.0V
VGS = 10.0V
16
12 ID = 50A
ID = 20A
8
4
2.00
0 5 10 15 20 25 30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs. Drain Current and
Gate Voltage
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.006
0.005
VGS = 10V
0.004
0.003
0.002
175
150
125
85
25
-55
0.001
0 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current and
Temperature
2
1.8
1.6 VGS = 10V, ID = 50A
1.4
1.2 VGS = 6V, ID = 50A
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6 On-Resistance Variation with Temperature
DMTH4005SPS
Document number: DS38150 Rev. 2 - 2
3 of 7
www.diodes.com
November 2015
© Diodes Incorporated







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