MODE MOSFET. DMTH4005SK3Q Datasheet

DMTH4005SK3Q MOSFET. Datasheet pdf. Equivalent

DMTH4005SK3Q Datasheet
Recommendation DMTH4005SK3Q Datasheet
Part DMTH4005SK3Q
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Feature DMTH4005SK3Q; Green DMTH4005SK3Q 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 40V RDS(ON).
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Diodes DMTH4005SK3Q
Green DMTH4005SK3Q
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON) Max
4.5mΩ @ VGS = 10V
ID
TC = +25°C
95A
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable
and Robust End Application
Low RDS(ON) Minimizes Power Losses
Low QG Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET has been designed to meet the stringent requirements
of Automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:
Engine Management Systems
Body Control Electronics
DC-DC Converters
TO252 (DPAK)
D
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
Top View
D
GS
Top View
Pin Out
G
S
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMTH4005SK3Q-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
H4005S
YYWW
= Manufacturers Marking
H4005S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMTH4005SK3Q
Document number: DS38661 Rev. 1 - 2
1 of 7
www.diodes.com
March 2016
© Diodes Incorporated



Diodes DMTH4005SK3Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7)
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TC = +25°C
(Note 10)
TC = +100°C
TC = +25C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH4005SK3Q
Value
40
±20
95
73
150
150
32.5
52.8
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.1
38
100
1.5
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2



Typ
3.6
0.9
3,062
902.2
179.2
0.67
49.1
10.3
13
8.7
6.8
18.6
7.3
31.8
26.5
Max
1
±100
4
4.5




Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
Unit
V
µA
nA
V
m
V
pF
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 1mA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 0V, IS = 50A
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 20V, ID = 50A,
VGS = 10V
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3
IF = 50A, di/dt = 100A/μs
DMTH4005SK3Q
Document number: DS38661 Rev. 1 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated



Diodes DMTH4005SK3Q
DMTH4005SK3Q
50.0
45.0
VGS = 10.0V
40.0
35.0
VGS = 5.0V
VGS=4.5V
30.0
25.0
20.0
15.0
10.0
VGS = 4.0V
5.0
0.0
0
VGS = 3.5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
20
18 VDS = 5.0V
16
14
12
10
8
6
4
2
0
0
150
175
125
85
25
-55
1234
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
6.00
5.00
4.00
3.00
VGS = 10.0V
2.00
1.00
0.00
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
20
18
16
14
12
10
8
6
4
2
0
2
ID = 50A
4 6 8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
VGS = 10V
150
125
85
25
-55
175
2.2
2
1.8
1.6
1.4
1.2
1
0.8 VGS = 10V, ID = 50A
0.6
0
10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMTH4005SK3Q
Document number: DS38661 Rev. 1 - 2
3 of 7
www.diodes.com
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ()
Figure 6. On-Resistance Variation with Temperature
March 2016
© Diodes Incorporated







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