MODE MOSFET. DMTH4007SPSQ Datasheet

DMTH4007SPSQ MOSFET. Datasheet pdf. Equivalent

DMTH4007SPSQ Datasheet
Recommendation DMTH4007SPSQ Datasheet
Part DMTH4007SPSQ
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Feature DMTH4007SPSQ; Green DMTH4007SPSQ 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary BVDSS 40V .
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Diodes DMTH4007SPSQ
Green DMTH4007SPSQ
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
BVDSS
40V
RDS(ON) Max
7.6mΩ @ VGS = 10V
ID Max
TC = +25°C
(Note 10)
100A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Power Management
DC-DC Converters
Motor Control
Features
Rated to +175°C Ideal for High Ambient Temperature
Environments
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: POWERDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI®5060-8
Top View
Pin1
Bottom View
Internal Schematic
SD
SD
SD
GD
Top View
Pin Configuration
Ordering Information (Note 5)
Notes:
Part Number
DMTH4007SPSQ-13
Case
POWERDI®5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. For more information, please refer to
http://www.diodes.com/product_ compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH4007SPSQ
Marking Information
DDDD
H4007SS
YY WW
SS SG
DMTH4007SPSQ
= Manufacturer’s Marking
H4007SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
TA = +25°C
TA = +70°C
TC = +25°C
(Note 10)
TC = +100°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
40
±20
15.7
13.1
100
77
100
120
20
60
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.8
53
136
1.1
-55 to +175
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
Units
W
°C/W
W
°C/W
°C
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
2 of 8
www.diodes.com
November 2015
© Diodes Incorporated



Diodes DMTH4007SPSQ
DMTH4007SPSQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
(Note 9)
BVDSS
IDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
Min
40
2
0.1
Typ
4.9
2,082
790
113
0.46
41.9
10
11.5
7
11.5
15.6
8.8
29.9
23
Max
1
100
±100
4
7.6
1.2
1.4
Unit
Test Condition
V VGS = 0V, ID = 1mA
μA VDS = 32V, VGS = 0V
μA VDS = 32V, VGS = 0V, TJ = +125°C
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 20A
V VGS = 0V, IS = 20A
pF
VDS = 25V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 30V, ID = 20A, VGS = 10V
ns
VDD = 30V, VGS = 10V,
ID = 20A, RG = 3Ω
ns
nC
IF = 20A, di/dt = 100A/μs
POWERDI is a registered trademark of Diodes Incorporated.
DMTH4007SPSQ
Document number: DS38160 Rev. 1 - 2
3 of 8
www.diodes.com
November 2015
© Diodes Incorporated







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