Power Amplifier. MAAP-015016-DIE Datasheet

MAAP-015016-DIE Amplifier. Datasheet pdf. Equivalent

MAAP-015016-DIE Datasheet
Recommendation MAAP-015016-DIE Datasheet
Part MAAP-015016-DIE
Description Power Amplifier
Feature MAAP-015016-DIE; MAAP-015016-DIE Ka-Band 4 W Power Amplifier 32 - 38 GHz Features  Frequency Range: 32 to 38 GHz  S.
Manufacture MA-COM
Datasheet
Download MAAP-015016-DIE Datasheet




MA-COM MAAP-015016-DIE
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Features
Frequency Range: 32 to 38 GHz
Small Signal Gain: 18 dB
Saturated Power: 37 dBm
Power Added Efficiency: 23%
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method
2010
Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V
Dimensions: 3.09 x 5.67 x 0.05 mm
Description
The MAAP-015016-DIE is a wideband power
amplifier operating from 32 to 38 GHz, with a
saturated output power of 37 dBm, 23% PAE and
small signal gain of 18 dB.
The design is fully matched to 50 Ohms and
includes on-chip ESD protection and integrated DC
blocking caps on both I/O ports. The device is
manufactured in 0.15 µm GaAs pHEMT device
technology with BCB wafer coating to enhance
ruggedness and repeatability of performance.
The part is well suited for Radar and
Communications applications.
Ordering Information1
Part Number
MAAP-015016-DIE
Package
Die in Gel Pack1
MAAP-015016-DIEEV1
Evaluation Module
1. Die quantity varies.
Functional Diagram
Rev. V1
Pin Configuration2
Pad Function
Description
1
2,14
3,13
4,12
5,11
6,10
7,9
8
RFIN
VG1,2,3
VD1
VD2
VD3
VG4
VD4
RFOUT
Input, matched to 50 Ω
Gate Voltage Stage 1 - 3
Drain Voltage Stage 1
Drain Voltage Stage 2
Drain Voltage Stage 3
Gate Voltage Stage 4
Drain Voltage Stage 4
Output, matched to 50 Ω
2. Backside metal is RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport



MA-COM MAAP-015016-DIE
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Rev. V1
Electrical Specifications- Pulsed Operation:
Freq. = 32 - 38 GHz, TA = +25°C, Z0 = 50 Ω, Duty Cycle = 5%, Pulse = 5 µs, PIN = 20 dBm
Parameter
Test Conditions
Units Min.
Typ.
Max.
Gain
dB
18
Input Return Loss
dB
10
Gain Flatness
dB
1.5
Output Return Loss
Output Power at Saturation
PAE at Saturation
33.0 - 36.0 GHz
36.0 - 36.5 GHz
dB
dBm
%
35
34
14
37
23
Drain Voltage
V
6
Gate Voltage
V -1.1 -0.9
-0.8
Drain Current
A - 2.5
-
Drain Current
Under RF Drive (33.0 - 36.5 GHz)
A 2 3.7 4.5
Electrical Specifications - CW Operation:
Freq. = 32 - 38 GHz, TA = +25°C, Z0 = 50 Ω, PIN = 20 dBm
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Gain
dB
18
Gain Flatness
dB
1.5
Input Return Loss
dB
10
Output Return Loss
dB
14
Output Power at Saturation
dBm
36.5
PAE at Saturation
%
21
Drain Voltage
V
6
Gate Voltage
V -1.1 -0.9
-0.8
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport



MA-COM MAAP-015016-DIE
MAAP-015016-DIE
Ka-Band 4 W Power Amplifier
32 - 38 GHz
Absolute Maximum Ratings2,3
Parameter
Rating
Input Power, CW, 50 Ω
+23 dBm
Drain Voltage
+6.5 V
Gate Voltage
-2 to 0 V
Drain Current
4.5 A
Gate Current
-20 mA to 5 mA
Power Dissipation
20 W
Storage Temperature
-65°C to +165°C
Operating Temperature
-40°C to +85°C
Channel Temperature4,5
+175°C
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. MACOM does not recommend sustained operation near
these survivability limits.
4. Operating at nominal conditions with TC ≤ +175°C will ensure
MTTF > 1 x 106 hours.
5. Channel Temperature (TC) = TA + Өjc * ((V * I) - Pout)
Typical thermal resistance (Өjc) = 4.3°C/W.
a) For TA = 25°C,
TC = 90°C @ 6 V, 2.5 A (Quiescent bias only)
b) For TA = 85°C,
TC = 150°C @ 6 V, 2.5 A (Quiescent bias only)
Rev. V1
Recommended Operating Conditions
Parameter
Rating
Drain Voltage
+6 V
Gate Voltage
-0.9 V
Drain Current
Drain Current
(Under RF Drive)
2.5 A
3.7 A
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
HBM class 1B devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport







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