Wideband Transistor. MAGX-011086 Datasheet

MAGX-011086 Transistor. Datasheet pdf. Equivalent

MAGX-011086 Datasheet
Recommendation MAGX-011086 Datasheet
Part MAGX-011086
Description GaN Wideband Transistor
Feature MAGX-011086; MAGX-011086 GaN on Silicon General Purpose Amplifier DC - 6 GHz, 28 V, 4 W Features  GaN on Si HEM.
Manufacture MA-COM
Datasheet
Download MAGX-011086 Datasheet




MA-COM MAGX-011086
MAGX-011086
GaN on Silicon General Purpose Amplifier
DC - 6 GHz, 28 V, 4 W
Features
GaN on Si HEMT D-Mode Amplifier
Suitable for Linear & Saturated Applications
Tunable from DC - 6 GHz
28 V Operation
9 dB Gain @ 5.8 GHz
45% Drain Efficiency @ 5.8 GHz
100% RF Tested
Thermally-Enhanced 4 mm 24-Lead QFN
RoHS* Compliant
Rev. V3
Description
The MAGX-011086 is a GaN on silicon HEMT
amplifier optimized for DC - 6 GHz operation in a
user friendly package ideal for high bandwidth
applications. The device has been designed for
saturated and linear operation with output power
levels of 4 W (36 dBm) in an industry standard, low
inductance, surface mount QFN package. The pads
of the package form a coplanar launch that naturally
absorbs lead parasitics and features a small PCB
outline for space constrained applications.
The MAGX-011086 is ideally suited for Wireless
LAN, High Dynamic Range LNA’s, broadband
general purpose, land mobile radio, defense
communications, wireless infrastructure, and ISM
applications.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Ordering Information1
Part Number
MAGX-011086
MAGX-011086-TR0500
MAGX-011086-SMB2
Package
Bulk Quantity
500 piece reel
Sample Board
1. Reference Application Note M513 for reel size information.
Functional Schematic
N/C N/C N/C N/C N/C N/C
24 23 22 21 20 19
N/C 1
N/C 2
RFIN / VG 3
RFIN / VG 4
N/C 5
N/C 6
Input
Match
25
Paddle
18 N/C
17 N/C
16 RFOUT / VD
15 RFOUT / VD
14 N/C
13 N/C
7
8
9 10 11 12
N/C N/C N/C N/C N/C N/C
Pin Configuration2
Pin #
Pin Name
Function
1-2
N/C
No Connection
3-4
5 -14
RFIN / VG
N/C
RF Input / Gate
No Connection
15 - 16
17 - 24
25
RFOUT / VD
N/C
Paddle3
RF Output / Drain
No Connection
Ground / Source
2. All no connection pins may be left floating or grounded.
3. The exposed pad centered on the package bottom must be
connected to RF and DC ground and provide a low thermal
resistance heat path.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007108



MA-COM MAGX-011086
MAGX-011086
GaN on Silicon General Purpose Amplifier
DC - 6 GHz, 28 V, 4 W
Rev. V3
RF Electrical Specifications: TA = 25C, VDS = 28 V, IDQ = 50 mA
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 5.8 GHz
GSS
-
11
-
dB
Saturated Output Power
CW, 5.8 GHz
PSAT
-
37
-
dBm
Drain Efficiency at Saturation
CW, 5.8 GHz
hSAT
-
50
-
%
Power Gain
5.8 GHz, POUT = 4 W
GP
8
9
-
dB
Drain Efficiency
5.8 GHz, POUT = 4 W
h
40
45
-
%
Ruggedness: Output Mismatch
All phase angles
Y
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25C
Parameter
Test Conditions
Drain-Source Leakage Current
VGS = -8 V, VDS = 100 V
Gate-Source Leakage Current
VGS = -8 V, VDS = 0 V
Gate Threshold Voltage
VDS = +28 V, ID = 2 mA
Gate Quiescent Voltage
VDS = +28 V, ID = 50 mA
On Resistance
VDS = +2 V, ID = 15 mA
Saturated Drain Current
VDS = 7 V, Pulse Width 300 µs
Symbol
IDLK
IGLK
VT
VGSQ
RON
ID(SAT)
Min.
-
-
-2.5
-2.1
-
-
Typ.
-
-
-1.5
-1.2
2.0
1.4
Max.
2
1
-0.5
-0.3
-
-
Units
mA
mA
V
V
W
A
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007108



MA-COM MAGX-011086
MAGX-011086
GaN on Silicon General Purpose Amplifier
DC - 6 GHz, 28 V, 4 W
Absolute Maximum Ratings4,5,6
Parameter
Drain-Source Voltage, VDS
Absolute Max.
100 V
Gate-Source Voltage, VGS
-10 V to 3 V
Gate Current, IG
4 mA
Junction Temperature, TJ
+200°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
4. Exceeding any one or combination of these limits may cause permanent damage to this device.
5. MACOM does not recommend sustained operation near these survivability limits.
6. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Rev. V3
Thermal Characteristics7,8
Parameter
Test Conditions
Symbol Typ. Units
Thermal Resistance
VDS = 28 V, TJ = 200°C
ӨJC
12.5 °C/W
7. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
8. The thermal resistance of the mounting configuration must be added to the device ӨJC, for proper TJ
calculation during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1 oz. plated
copper, PCB contributes an additional 6.6°C/W to the typical value.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these class 1A
devices.
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0007108







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