Pulsed Transistor. MAGX-000035-01000P Datasheet

MAGX-000035-01000P Transistor. Datasheet pdf. Equivalent

MAGX-000035-01000P Datasheet
Recommendation MAGX-000035-01000P Datasheet
Part MAGX-000035-01000P
Description Pulsed Transistor
Feature MAGX-000035-01000P; MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V.
Manufacture MA-COM
Datasheet
Download MAGX-000035-01000P Datasheet




MA-COM MAGX-000035-01000P
MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Rev. V2
Features
GaN on SiC D-Mode Transistor Technology
Unmatched, Ideal for Pulsed / CW Applications
50 V Typical Bias, Class AB
Common-Source Configuration
Thermally-Enhanced 3 x 6 mm 14-Lead DFN
MTTF = 600 years (TJ < 200°C)
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
MSL-1
Description
The MAGX-000035-01000P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall power transistor size, cost
and weight in a “TRUE SMT” plastic-packaging
technology.
Use of an internal stress buffer technology allows
reliable operation at junction temperatures up to
200°C. The small package size and excellent RF
performance make it an ideal replacement for costly
flanged or metal-backed module components.
Ordering Information1,2
Part Number
Package
Functional Schematic
12 34 56 7
NC NC
G
NC NC
GG
15
D
NC NC
D
D
NC NC
MAGX-000035-01000P
Bulk Packaging
14 13 12 11 10 9 8
MAGX-000035-0100TP
500 Piece Reel
MAGX-000035-PB4PPR
Sample Board
1. Reference Application Note M513 for reel size information.
2. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4/5 or specify a desired
custom range. Custom requests may increase lead times.
Pin Configuration3
Pin No. Function
1 No Connection
2 No Connection
3 VGG/RFIN
4 VGG/RFIN
5 VGG/RFIN
6 No Connection
Pin No.
8
9
10
11
12
13
Function
No Connection
No Connection
VDD/RFOUT
VDD/RFOUT
VDD/RFOUT
No Connection
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
7 No Connection 14 No Connection
15 Paddle4
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAGX-000035-01000P
MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Rev. V2
Typical Performance: VDD = 50 V, IDQ = 30 mA, TA = 25°C
Parameter
30 MHz
1 GHz
Gain
17 15
Saturated Power (PSAT)
Power Gain at PSAT
PAE @ PSAT
13
15
65
11
14
55
2.5 GHz
14
10
13
53
3.5 GHz
14
10
12
50
Electrical Specifications5: Freq. = 1.6 GHz, TA = 25°C, Z0 = 50 Ω
Parameter
Symbol Min. Typ. Max.
CW RF FUNCTIONAL TESTS: VDD = 50 V, IDQ = 30 mA, P2.5 dB
CW Output Power
POUT
-
10
-
Pulsed RF FUNCTIONAL TESTS: VDD = 50 V, IDQ = 30 mA, P2.5 dB, Pulse Width = 1 ms, Duty Cycle = 10%
Pulsed Output Power
POUT 9.2 10.6
-
Pulsed Power Gain
GP 14.2 14.8
-
Pulsed Drain Efficiency
ηD 52 56
-
Load Mismatch Stability
VSWR-S - 5:1 -
Load Mismatch Tolerance
VSWR-T -
10:1
5. Electrical specifications measured in MACOM RF evaluation boards. See recommended tuning solutions on page 4.
-
Electrical Characteristics: TA = 25°C
Parameter
Test Conditions
Symbol
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 2 mA
VDS = 5 V, ID = 250 mA
IDS
VGS (th)
GM
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
Min.
-
-5
0.20
-
-
-
Typ.
-
-3
-
2.2
0.9
0.1
Max.
1.0
-2
-
-
-
-
Units
dB
W
dB
%
Units
W
W
dB
%
-
-
Units
mA
V
S
pF
pF
pF
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298



MA-COM MAGX-000035-01000P
MAGX-000035-01000P
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Absolute Maximum Ratings 6,7,8,9,10
Parameter
Absolute Max.
Input Power
Drain Supply Voltage, VDD
Gate Supply Voltage, VGG
Supply Current, IDD
Power Dissipation, CW @ 85ºC
Power Dissipation (PAVG), Pulsed @ 85°C
Junction Temperature11
Operating Temperature
Storage Temperature
POUT - GP + 2.5 dBm
+65 V
-8 V to 0 V
500 mA
12 W
12 W
200°C
-40°C to +95°C
-65°C to +150°C
ESD Maximum - Human Body Model (HBM)
400 V
ESD Maximum - Charged Device Model (CDM)
150 V
6. Exceeding any one or combination of these limits may cause permanent damage to this device.
7. MACOM does not recommend sustained operation near these survivability limits.
8. For saturated performance it is recommended that the sum of (3 * VDD + abs (VGG)) < 175 V.
9. CW operation at VDD voltages above 50 V is not recommended.
10. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Junction temperature
directly affects device MTTF and should be kept as low as possible to maximize lifetime.
11. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical CW thermal resistance (ӨJC) = 5.8°C/W
a) For TC = 83°C,
TJ = 124°C @ 50 V, 330 mA, POUT = 10W, PIN = 0.6W
Typical transient thermal resistances:
b) 300 µs pulse, 10% duty cycle, ӨJC = 1.94°C/W
For TC = 83°C,
TJ = 97°C @ 50 V, 325mA, POUT = 9.8W, PIN = 0.6 W
c) 1 ms pulse, 10% duty cycle, ӨJC = 2.01°C/W
For TC = 83°C,
TJ = 98°C @ 50 V, 325mA, POUT = 9.8W, PIN = 0.6W
d) 1 ms pulse, 20% duty cycle, ӨJC = 2.56°C/W
For TC = 83°C,
TJ = 101°C @ 50 V, 325 mA, POUT = 9.8 W, PIN = 0.6 W
Rev. V2
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298







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