Photocouplers Photorelay. TLP222D Datasheet

TLP222D Photorelay. Datasheet pdf. Equivalent

TLP222D Datasheet
Recommendation TLP222D Datasheet
Part TLP222D
Description Photocouplers Photorelay
Feature TLP222D; Photocouplers Photorelay TLP222D TLP222D 1. Applications • Mechanical relay replacements • Securit.
Manufacture Toshiba
Datasheet
Download TLP222D Datasheet




Toshiba TLP222D
Photocouplers Photorelay
TLP222D
TLP222D
1. Applications
• Mechanical relay replacements
• Security Systems
• Measuring Instruments
• Factory Automation (FA)
• Amusement Equipment
• Smart Meters
• Electricity Meters
2. General
The TLP222D photorelay consist of a photo MOSFET optically coupled to an infrared LED. They are housed in
a 4-pin DIP package whose withstanding voltage is 200V.
3. Features
(1) Normally opened (1-Form-A)
(2) OFF-state output terminal voltage: 200 V (min)
(3) Trigger LED current: 3 mA (max)
(4) ON-state current: 300 mA (max)
(5) ON-state resistance: 8 (max, Continuous)
(6) Isolation voltage: 2500 Vrms (min)
(7) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
©2017-2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2013-05
2019-11-21
Rev.4.0



Toshiba TLP222D
4. Packaging
TLP222D
11-5B2S
5. Pin Assignment
6. Internal Circuit
1: Anode
2: Cathode
3: Drain
4: Drain
©2017-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-11-21
Rev.4.0



Toshiba TLP222D
TLP222D
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
LED Input forward current
IF
50
mA
Input forward current derating
(Ta 25 )
IF/Ta
-0.5
mA/
Input forward current (pulsed)
(100 µs pulse, 100 pps)
IFP
1
A
Input reverse voltage
VR
6
V
Input power dissipation
PD
50
mW
Input power dissipation derating
(Ta 25 )
PD/Ta
-0.5
mW/
Junction temperature
Tj
125
Detector OFF-state output terminal voltage
VOFF
200
V
ON-state current
ION
300
mA
ON-state current derating
(Ta 25 )
ION/Ta
-3.0
mA/
ON-state current (pulsed)
(t = 100 ms, Duty = 1/10)
IONP
0.9
A
Output power dissipation
PO
550
mW
Output power dissipation derating
(Ta 25 )
PO/Ta
-5.5
mW/
Junction temperature
Tj
125
Common Storage temperature
Tstg
-55 to 125
Operating temperature
Topr
-40 to 85
Lead soldering temperature
(10 s)
Tsol
260
Isolation voltage
AC, 60 s, R.H. 60 %
BVS
(Note 1)
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Symbol Note Min Typ. Max Unit
Supply voltage
VDD
160
V
Input forward current
IF
5
7.5
25
mA
ON-state current
ION
300 mA
Operating temperature
Topr
-20
65
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
©2017-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-11-21
Rev.4.0







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