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TLP3312 Dataheets PDF



Part Number TLP3312
Manufacturers Toshiba
Logo Toshiba
Description Photocoupler Photorelay
Datasheet TLP3312 DatasheetTLP3312 Datasheet (PDF)

TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3312 Applications Battery Control Measuring Instruments Logic IC Testers / Memory Testers TLP3312 Unit: mm General The TOSHIBA TLP3312 is an ultra-small photorelay suitable for surfacemount assembly. The TLP3312 consists of an infrared emitting diode optically coupled to a photo-MOSFET and is housed in a 4-pin package. Its features include low Off-state current and low output pin capacitance. Features  4-pin USOP (SSOP4): height=1.65 mm, pitch=1.27 mm  1-F.

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TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3312 Applications Battery Control Measuring Instruments Logic IC Testers / Memory Testers TLP3312 Unit: mm General The TOSHIBA TLP3312 is an ultra-small photorelay suitable for surfacemount assembly. The TLP3312 consists of an infrared emitting diode optically coupled to a photo-MOSFET and is housed in a 4-pin package. Its features include low Off-state current and low output pin capacitance. Features  4-pin USOP (SSOP4): height=1.65 mm, pitch=1.27 mm  1-Form-A  Peak Off-State Voltage: 60 V (min)  Trigger LED Current: 3 mA (max)  On-State Current: 400 mA (max)  On-State Resistance: 1.5 Ω (max), 1.0 Ω (typ.)  Isolation Voltage: 1000 Vrms (min)  UL-recognized: UL 1577, File No.E67349 TOSHIBA 11-2C1 Weight: 0.03 g (typ.) Pin Configuration (Top View) Schematic 1 4 1 4 2 3 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN © 2017-2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-03 2019-06-24 Absolute Maximum Ratings (Ta = 25°C) TLP3312 CHARACTERISTIC SYMBOL RATING UNIT DETECTOR LE D Forward Current Forward Current Derating (Ta ≥ 25°C) Reverse Voltage Diode Power Dissipation Diode Power Dissipation Derating (Ta ≥25°C) Junction Temperature Off-State Output Terminal Voltage On-State Current On-State Current Derating (Ta ≥ 25°C) Output Power Dissipation Output Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature Storage Temperature Range Operating Temperature Range Lead Soldering Temperature (10 s) Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note 1) IF ∆IF/°C VR PD △PD /°C Tj VOFF ION ∆ION/°C PO ΔPO / °C Tj Tstg Topr Tsol BVS 50 −0.5 5 50 -0.5 125 60 400 −4.0 240 −2.4 125 −40 to 125 −40 to 85 260 1000 mA mA/°C V mW mW/°C °C V mA mA/°C mW mW / °C °C °C °C °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Supply Voltage VDD ― ― 48 V Forward Current IF ― ― 20 mA On-State Current ION ― ― 400 mA Operating Temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the devic.


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