Photocoupler Photorelay. TLP3312 Datasheet

TLP3312 Photorelay. Datasheet pdf. Equivalent

TLP3312 Datasheet
Recommendation TLP3312 Datasheet
Part TLP3312
Description Photocoupler Photorelay
Feature TLP3312; TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP3312 Applications Battery Control Measuring Instruments Logic IC.
Manufacture Toshiba
Datasheet
Download TLP3312 Datasheet




Toshiba TLP3312
TOSHIBA PHOTOCOUPLER PHOTO RELAY
TLP3312
Applications
Battery Control
Measuring Instruments
Logic IC Testers / Memory Testers
TLP3312
Unit: mm
General
The TOSHIBA TLP3312 is an ultra-small photorelay suitable for surface-
mount assembly. The TLP3312 consists of an infrared emitting diode
optically coupled to a photo-MOSFET and is housed in a 4-pin package.
Its features include low Off-state current and low output pin capacitance.
Features
4-pin USOP (SSOP4): height=1.65 mm, pitch=1.27 mm
1-Form-A
Peak Off-State Voltage: 60 V (min)
Trigger LED Current: 3 mA (max)
On-State Current: 400 mA (max)
On-State Resistance: 1.5 Ω (max), 1.0 (typ.)
Isolation Voltage: 1000 Vrms (min)
UL-recognized: UL 1577, File No.E67349
TOSHIBA
11-2C1
Weight: 0.03 g (typ.)
Pin Configuration (Top View)
Schematic
1
4
1
4
2
3
2
3
1 : ANODE
2 : CATHODE
3 : DRAIN
4 : DRAIN
© 2017-2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2009-03
2019-06-24



Toshiba TLP3312
Absolute Maximum Ratings (Ta = 25°C)
TLP3312
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
Forward Current Derating (Ta 25°C)
Reverse Voltage
Diode Power Dissipation
Diode Power Dissipation Derating (Ta 25°C)
Junction Temperature
Off-State Output Terminal Voltage
On-State Current
On-State Current Derating (Ta 25°C)
Output Power Dissipation
Output Power Dissipation Derating (Ta 25°C)
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10 s)
Isolation Voltage (AC, 60 s, R.H. 60 %) (Note 1)
IF
IF/°C
VR
PD
PD /°C
Tj
VOFF
ION
ION/°C
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
50
0.5
5
50
-0.5
125
60
400
4.0
240
2.4
125
40 to 125
40 to 85
260
1000
mA
mA/°C
V
mW
mW/°C
°C
V
mA
mA/°C
mW
mW / °C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment
are earthed.
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL MIN TYP. MAX UNIT
Supply Voltage
VDD
48
V
Forward Current
IF
20
mA
On-State Current
ION
400 mA
Operating Temperature
Topr
20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
devices. Each item also has its own independent guideline document. In developing designs using these products,
please confirm the specified characteristics shown in these documents.
© 2017-2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24



Toshiba TLP3312
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
Off-State Current
SYMBOL
TEST CONDITION
VF
IF = 10 mA
IR
VR = 5 V
CT
VF = 0 V, f = 1 MHz
IOFF
VOFF = 60 V
COFF
V = 0V, f = 1 MHz, t < 1 s
TLP3312
MIN
TYP.
MAX UNIT
1.0
1.15
1.3
V
10
μA
15
pF
1
nA
20
pF
© 2017-2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24







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