Photocoupler Photorelay. TLP3340 Datasheet

TLP3340 Photorelay. Datasheet pdf. Equivalent

TLP3340 Datasheet
Recommendation TLP3340 Datasheet
Part TLP3340
Description Photocoupler Photorelay
Feature TLP3340; Photocouplers Photorelay TLP3340 TLP3340 1. Applications • High-Speed Memory Testers • High-Speed .
Manufacture Toshiba
Datasheet
Download TLP3340 Datasheet




Toshiba TLP3340
Photocouplers Photorelay
TLP3340
TLP3340
1. Applications
• High-Speed Memory Testers
• High-Speed Logic IC Testers
• Radio-Frequency Measuring Instruments
• ATE (Automatic Test Equipment)
2. General
The TLP3340 is a photorelay in a 4-pin USOP that consists of a photo MOSFET optically coupled with an infrared
LED. The TLP3340 features low output capacitance, COFF, and thus fast on/off switching of a high-frequency
signal, making it ideal for switching applications in high-speed testers.
3. Features
(1) Normally opened (1-Form-A)
(2) OFF-state output terminal voltage: 40 V (min)
(3) Trigger LED current: 3 mA (max)
(4) ON-state current: 120 mA (max)
(5) ON-state resistance: 12 (typ.), 14 (max)
(6) OFF-state Capacitance: 0.45 pF (typ.), 0.8 pF (max)
(7) Isolation voltage: 1000 Vrms (min)
(8) Safety standards
UL-recognized: UL 1577, File No.E67349
4. Packaging and Pin Configuration
11-2C1S
©2017-2020
Toshiba Electronic Devices & Storage Corporation
1
1: Anode
2: Cathode
3: Drain
4: Drain
Start of commercial production
2011-05
2020-02-18
Rev.4.0



Toshiba TLP3340
5. Internal Circuit
TLP3340
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
LED Input forward current
IF
50
mA
Input forward current derating
Input reverse voltage
(Ta 25 )
IF/Ta
VR
-0.5
mA/
5
V
Input power dissipation
PD
50
mW
Input power dissipation derating
(Ta 25 )
PD/Ta
-0.5
mW/
Junction temperature
Tj
125
Detector OFF-state output terminal voltage
VOFF
40
V
ON-state current
ON-state current derating
(Ta 25 )
ION
ION/Ta
120
mA
-1.2
mA/
ON-state current (pulsed)
(t = 100 ms, Duty = 1/10)
IONP
360
mA
Output power dissipation
PO
202
mW
Output power dissipation derating
(Ta 25 )
PO/Ta
-2.02
mW/
Junction temperature
Tj
125
Common Storage temperature
Tstg
-40 to 125
Operating temperature
Lead soldering temperature
Topr
(10 s)
Tsol
-40 to 85
260
Isolation voltage
AC, 60 s, R.H. 60 %
BVS (Note 1)
1000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
Caution:This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against
by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on.
©2017-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-02-18
Rev.4.0



Toshiba TLP3340
7. Recommended Operating Conditions (Note)
TLP3340
Characteristics
Symbol Note Min Typ. Max Unit
Supply voltage
VDD
32
V
Input forward current
IF
5
7.5
20
mA
ON-state current
ION
120
Operating temperature
Topr
-20
65
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
VF
IR
Ct
IOFF
COFF
Note
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
VOFF = 40 V
V = 0 V, f = 100 MHz, t < 1s
Min Typ. Max Unit
1.0 1.15 1.3
V
10
µA
15
pF
1
nA
0.45 0.8
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Trigger LED current
Return LED current
ON-state resistance
Symbol
IFT
IFC
RON
Note
Test Condition
ION = 100 mA, t < 1 s
IOFF = 10 µA
ION = 120 mA, IF = 5 mA, t < 1 s
Min Typ. Max Unit
0.5
3
mA
0.1
mA
12
14
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Total capacitance (input to output)
CS (Note 1) VS = 0 V, f = 1 MHz
0.4
pF
Isolation resistance
RS (Note 1) VS = 500 V, R.H. 60 %
5 × 1010 1014
Isolation voltage
BVS
AC, 60 s
1000
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
11. Switching Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Turn-on time
Turn-off time
Symbol
tON
tOFF
Note
Test Condition
See Fig. 11.1.
RL = 200 , VDD = 20 V, IF = 5 mA
Min Typ. Max Unit
30
200
µs
200 300
Fig. 11.1 Switching Time Test Circuit and Waveform
©2017-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-02-18
Rev.4.0







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)