Photocoupler Photorelay. TLP3545 Datasheet

TLP3545 Photorelay. Datasheet pdf. Equivalent

TLP3545 Datasheet
Recommendation TLP3545 Datasheet
Part TLP3545
Description Photocoupler Photorelay
Feature TLP3545; Photocouplers Photorelay TLP3545 TLP3545 1. Applications • Mechanical relay replacements • Securit.
Manufacture Toshiba
Datasheet
Download TLP3545 Datasheet




Toshiba TLP3545
Photocouplers Photorelay
TLP3545
TLP3545
1. Applications
• Mechanical relay replacements
• Security Systems
• Measuring Instruments
• Factory Automation (FA)
• Amusement Equipment
2. General
The TLP3545 photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a 6-
pin DIP package. The low ON-state resistance and the high permissible ON-state current of the the TLP3545
make it suitable for power line control applications.
3. Features
(1) Normally opened (1-Form-A)
(2) OFF-state output terminal voltage: 60 V (min)
(3) Trigger LED current: 3 mA (max)
(4) ON-state current: 3 A (max) (A connection)
(5) ON-state resistance: 70 m(max) (A connection)
(6) Isolation voltage: 2500 Vrms (min)
(7) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
4. Packaging and Pin Configuration
11-7A8S
©2017-2020
Toshiba Electronic Devices & Storage Corporation
1
1: Anode
2: Cathode
3: N.C.
4: Drain
5: Source
6: Drain
Start of commercial production
2011-05
2020-03-11
Rev.4.0



Toshiba TLP3545
5. Internal Circuit
TLP3545
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
LED Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current (A connection)
ON-state current (B connection)
IF
30
mA
(Ta 25 )
IF/Ta
-0.3
mA/
(100 µs pulse, 100 pps)
IFP
1
A
VR
5
V
PD
50
mW
(Ta 25 )
PD/Ta
-0.5
mW/
Tj
125
VOFF
60
V
ION
(Note 1)
3
A
3
ON-state current (C connection)
6
ON-state current derating (A connection)
ON-state current derating (B connection)
ON-state current derating (C connection)
ON-state current (pulsed)
(Ta 25 )
(Ta 25 )
(Ta 25 )
(t = 100 ms, duty = 1/10)
Output power dissipation
Output power dissipation derating
Junction temperature
(Ta 25 )
Common Storage temperature
Operating temperature
Lead soldering temperature
(10 s)
Isolation voltage
(AC, 60 s, R.H. 60 %)
ION/Ta
IONP
PO
PO/Ta
Tj
Tstg
Topr
Tsol
BVS
(Note 1)
(Note 2)
-30
-30
-60
9
500
-5.0
125
-55 to 125
-40 to 85
260
2500
mA/
A
mW
mW/
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: For an application circuit example, see Chapter 12.2.
Note 2: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2017-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-03-11
Rev.4.0



Toshiba TLP3545
7. Recommended Operating Conditions (Note)
TLP3545
Characteristics
Symbol Note Min Typ. Max Unit
Supply voltage
VDD
48
V
Input forward current
IF
5
10
25
mA
ON-state current (A connection)
ION
3
A
Operating temperature
Topr
-20
65
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
8. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
LED Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
VF
IR
Ct
IOFF
COFF
Note
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
VOFF = 60 V
V = 0 V, f = 1 MHz
Min Typ. Max Unit
1.18 1.33 1.48
V
10
µA
70
pF
1
µA
1000
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Trigger LED current
Return LED current
IFT
ION = 1.0 A
IFC
IOFF = 10 µA
ON-state resistance (A connection) RON (Note 1) ION = 2.0 A, IF = 5 mA, t < 1 s
ON-state resistance (B connection)
ON-state resistance (C connection)
ION = 4.0 A, IF = 5 mA, t < 1 s
Note 1: For an application circuit example, see Fig. 12.2.
0.5
3
mA
0.1
mA
40
70
m
20
10
10. Isolation Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Total capacitance (input to output)
CS (Note 1) VS = 0 V, f = 1 MHz
0.8
pF
Isolation resistance
RS (Note 1) VS = 500 V, R.H. 60 %
5 × 1010 1014
Isolation voltage
BVS (Note 1) AC, 60 s
2500
Vrms
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2017-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-03-11
Rev.4.0







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)