Photocoupler Photorelay. TLP4227G Datasheet

TLP4227G Photorelay. Datasheet pdf. Equivalent

TLP4227G Datasheet
Recommendation TLP4227G Datasheet
Part TLP4227G
Description Photocoupler Photorelay
Feature TLP4227G; TLP4227G,TLP4227G-2 TOSHIBA Photocoupler Photorelay TLP4227G, TLP4227G-2 PBX Telecommunication Mode.
Manufacture Toshiba
Datasheet
Download TLP4227G Datasheet




Toshiba TLP4227G
TLP4227G,TLP4227G-2
TOSHIBA Photocoupler Photorelay
TLP4227G, TLP4227G-2
PBX
Telecommunication
ModemFAX Cards, Modems In PC
Measurement Instrumentation
TLP4227G
Unit: mm
The TOSHIBA TLP4227G series consist of an infrared emitting diode
optically coupled to a photo-MOSFET in a plastic DIP package.
The TLP4227G series are a bi-directional switch, which can replace
mechanical relays in many applications.
Peak off-state voltage: 350 V (min)
Trigger LED current: 3 mA (max)
On-state current: 150 mA (max)
On-state resistance: 25 (max)
Isolation voltage: 2500 Vrms (min)
UL-recognized: UL 1577, File No. E67349
Pin Configuration (top view)
TLP4227G
TLP4227G-2
1
4
1
8
TOSHIBA
11-5B2
Weight: 0.26 g (typ.)
Unit: mm
TLP4227G-2
2
3
2
7
1: ANODE
2: CATHODE
3: DRAIN
3
6
4: DRAIN
4
5
1, 3: ANODE
2, 4: CATHODE
5 : DRAIN D1
6 : DRAIN D2
7 : DRAIN D3
8 : DRAIN D4
© 2019
1
Toshiba Electronic Devices & Storage Corporation
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Start of commercial production
2000-09
2019-06-24



Toshiba TLP4227G
Absolute Maximum Ratings (Ta = 25°C)
TLP4227G,TLP4227G-2
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 25°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Diode power dissipation
IF
50
IF/°C
-0.5
IFP
1
VR
5
PD
50
mA
mA/°C
A
V
mW
Diode power dissipation derating (Ta 25°C)
PD /°C
-0.5
mW/°C
Junction temperature
Off-state output terminal voltage
TLP4227G
Tj
125
°C
VOFF
350
V
On-state current
One channel
ION
150
mA
TLP4227G-2
Both channel
On-state current TLP4227G
derating
(Ta 25°C)
TLP4227G-2
One channel
Both channel
ION/°C
-1.5
mA/°C
Output power dissipation
PO
506
mW
Output power dissipation derating (Ta 25°C)
ΔPO / °C
-5.06
mW / °C
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H. 60 %)
(Note 1)
Tj
Tstg
Topr
Tsol
BVS
125
-55 to 125
-40 to 85
260
2500
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins
shorted together.
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24



Toshiba TLP4227G
Recommended Operating Conditions
TLP4227G,TLP4227G-2
Characteristics
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
On-state current
Operating temperature
VDD
IF
ION
Topr
280
V
5
25
mA
150 mA
-20
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Capacitance
Off-state current
Symbol
VF
IR
CT
IOFF
Test Condition
IF = 10 mA
VR = 5 V
VF = 0 V, f = 1 MHz
VOFF = 350 V
Min Typ. Max Unit
1.0 1.15 1.3
V
10
μA
30
pF
1
μA
Capacitance
COFF
V = 0 V, f = 1 MHz, IF = 5 mA
65
pF
© 2019
3
Toshiba Electronic Devices & Storage Corporation
2019-06-24







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