BRIDGE RECTIFIERS. ADB3506 Datasheet

ADB3506 RECTIFIERS. Datasheet pdf. Equivalent

ADB3506 Datasheet
Recommendation ADB3506 Datasheet
Part ADB3506
Description 35 AMP SILICON BRIDGE RECTIFIERS
Feature ADB3506; DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax.
Manufacture Diotec Semiconductor
Datasheet
Download ADB3506 Datasheet




Diotec Semiconductor ADB3506
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-3500-1B
ADBD-3500-1B
FEATURES
PRV Ratings from 50 to 1000 Volts
Surge overload rating to 400 Amps peak
High efficiency
MECHANICAL SPECIFICATION
SERIES: DB3500 - DB3510 and ADB3504 - ADB3508
Metal Case (Top & Sides)
BH
Electrically Isolated
BH
LT
LL
Electrically isolated metal case for maximum heat dissipation
UL RECOGNIZED - FILE #E141956
D1
+ AC
MECHANICAL DATA
Case: Metal (Potting epoxy carries U/L flammability Rating 94V-0)
D1
AC
_
Terminals: Round silver plated copper pins or fast-on terminals
Soldering: Per MIL-STD 202 Method 208 guaranteed (Note 1)
D2
BL
HOLE FOR
#8 SCREW
LD
D3 BL
AC
AC
_
BL D1
AC
_
+
D2
AC
D1
BL
+
Polarity: Marked on side of case
Mounting Position: Any. Through hole for #8 screw.
Max. mounting torque = 20 in-lb.
Weight: Fast-on Terminals - 1.1 Ounces (31.6 Grams)
Wire Leads - 0.95 Ounce (28.5 Grams)
Suffix "T" indicates FAST-ON TERMINALS
Suffix "W" indicates WIRE LEADS
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
SYMBOL CONTROLLED
AVALANCHE
RATINGS
NON-CONTROLLED
AVALANCHE
UNITS
Series Number
Maximum DC Blocking Voltage
VRM
ADB ADB ADB DB DB DB DB DB DB DB
3504 3506 3508 3500 3501 3502 3504 3506 3508 3510
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
VRWM
VRRM
400 600 800 50 100 200 400 600 800 1000
VOLTS
RMS Reverse Voltage
Thermal Energy (Rating for Fusing)
Peak Forward Surge Current (8.3 mSec single half sine wave
superimposed on rated load)
Average Forward Rectified Current @ TC = 50 oC (Note 2)
VR (RMS)
I2t
IFSM
IO
280 420 560 35
70 140 280 420 560 700
AMPS2
664 SEC
400
AMPS
35
Junction Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Mimimum Avalanche Voltage
Maximum Avalanche Voltage
V(BR) Min
V(BR) Max
450 650 850
900 1100 1300
n/a
n/a
VOLTS
Maximum Forward Voltage (Per Diode) at 17.5 Amps DC
Maximum Reverse Current at Rated VRM
@ TA = 25oC
@TA = 100 oC
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance (on Heat Sink); Junction to Ambient
(Note 3)
NOTES: (1) Maximum soldering time and temperature = 10 Sec @ 265 oC
(2) Unit Mounted on Metal Chassis.
(3) Mounted on an 11.8 in.2 x 0.06 in. thick (300mm2 x 1.5mm thick) copper plate.
VFM
IRM
VISO
RθJC
RθJL
1.1
1
5
2000
1.2
0.8
µA
VOLTS
oC/W
4.97fbrbd035
F45







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