Amplifier MMIC. AGN1440 Datasheet

AGN1440 MMIC. Datasheet pdf. Equivalent

AGN1440 Datasheet
Recommendation AGN1440 Datasheet
Part AGN1440
Description Ku Band GaN Power Amplifier MMIC
Feature AGN1440; AGN1440 AGN1440 Data Sheet Ku Band GaN Power Amplifier MMIC 1. Product Overview 1.1 General Descript.
Manufacture ASB
Datasheet
Download AGN1440 Datasheet




ASB AGN1440
AGN1440
AGN1440 Data Sheet
Ku Band GaN Power Amplifier MMIC
1. Product Overview
1.1 General Description
AGN1440 is a two-stage internally matched GaN MMIC Power Amplifier which operates between
13.75GHz and 14.50 GHz frequency range. This product is well suited for VSAT applications.
1.2 Features
Frequency Range: 13.75 - 14.50 GHz
Saturated Output Power: 41 dBm
Power Added Efficiency: 28 %
Small Signal Gain: 18.5 dB
Output Third Order Intercept Point: 43 dBm
Bias: VDD = +28 V, IDD = 350 mA, VGG = -2.8 V (Typical)
100% DC and RF tested
1.3 Applications
Ku Band VSAT
Point to Point Radio
1.4 Package Profile & RoHS Compliance
10-lead Flange Package
RoHS-compliant
1/11
ASB Inc. sales@asb.co.kr
June 2015



ASB AGN1440
AGN1440
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +28 V, CW, ZO = 50 
Parameters
Test Conditions
Gate Bias Voltage
f = 13.75 - 14.50 GHz
Output Power at Psat1)
f = 13.75 - 14.50 GHz
Power Gain at Psat1)
f = 13.75 - 14.50 GHz
Drain Current at Psat1)
f = 13.75 - 14.50 GHz
Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz
Gain Flatness
f = 13.75 - 14.50 GHz
Input Return Loss
f = 13.75 - 14.50 GHz
Output Return Loss
f = 13.75 - 14.50 GHz
Output TOI2)
Δf = 10 MHz
2-Tone Test
Output power / Tone = +32 dBm
Supply Current
VDD = +28 V
1) Psat: Saturated output power
2) TOI: Third order intercept point
Min
39
9
Typ Max Units
-2.8 -2.5 V
41 dBm
11 dB
1700 1900 mA
28 %
0.5 1.0 dB
-10 -6 dB
-14 -10 dB
43 dBm
350 mA
2.2 Product Specification
Test conditions : T = +25 C, VDD= +28 V, CW, VGG = -2.8 V typical, ZO = 50 
Parameter
Min Typ Max
Frequency
13.75
14.50
Small Signal Gain
18 18.5
Input Return Loss
-10 -6
Output Return Loss
-14 -10
Supply Current
350
Unit
GHz
dB
dB
dB
mA
2.3 Absolute Maximum Ratings
Parameters
Operating Case Temperature (Tc)
Storage Temperature (Tstg)
Drain Voltage (VDD)
Gate Voltage (VGG)
Input RF Power (Pin)
Max. Ratings
-40 to 85 C
-55 to 125 C
+35 V
-5.0 to -2.5 V
+35 dBm
2/11
ASB Inc. sales@asb.co.kr
June 2015



ASB AGN1440
2.4 Pin Descriptions
AGN1440
Pin Pin Name
1,5 Vg
3 RF IN
6,10 Vd
8 RF OUT
2,4,7,9 NC
Description
Gate voltage
Input, matched to 50 ohms
Drain voltage
Output, matched to 50 ohms
No internal connection ( open
or connected to GND )
3/11
ASB Inc. sales@asb.co.kr
June 2015







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)