Amplifier MMIC. AGN1540 Datasheet

AGN1540 MMIC. Datasheet pdf. Equivalent

AGN1540 Datasheet
Recommendation AGN1540 Datasheet
Part AGN1540
Description Ku Band GaN Power Amplifier MMIC
Feature AGN1540; Preliminary AGN1540 AGN1540 Data Sheet Ku Band GaN Power Amplifier MMIC 1. Product Overview 1.1 Gene.
Manufacture ASB
Datasheet
Download AGN1540 Datasheet




ASB AGN1540
Preliminary AGN1540
AGN1540 Data Sheet
Ku Band GaN Power Amplifier MMIC
1. Product Overview
1.1 General Description
AGN1540 is a two-stage internally matched GaN MMIC Power Amplifier which operates between 13.75
GHz and 16.00 GHz frequency range. This product is well suited for VSAT applications.
1.2 Features
Frequency Range: 13.75 - 16.00 GHz
Saturated Output Power: 40 dBm
Power Added Efficiency: 21 %
Power Gain : 10 dB
Small Signal Gain: 16 dB @ 16.00 GHz
Output Third Order Intercept Point: 42 dBm
Bias: VDD = +28 V, IDD = 350 mA, VGG = -2.8 V (Typical)
100% DC and RF tested
1.3 Applications
Ku Band VSAT
Point to Point Radio
1.4 Package Profile & RoHS Compliance
10-lead Flange Package
RoHS-compliant
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ASB Inc. sales@asb.co.kr
Sept 2015



ASB AGN1540
Preliminary AGN1540
2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +28 V, CW, ZO = 50 
Parameters
Test Conditions
Min Typ Max Units
Gate Bias Voltage
f = 13.75 - 16.00 GHz
-2.6 -2.8 -3.0 V
Output Power at Psat1)
f = 13.75 - 16.00 GHz
38 40
dBm
Power Gain at Psat1)
f = 13.75 - 16.00 GHz
10 dB
Drain Current at Psat1)
f = 13.75 - 16.00 GHz
1700 2000 mA
Power Added Efficiency at Psat1) f = 13.75 - 16.00 GHz
20 21
%
Small Signal Gain
f = 13.75 - 16.00 GHz
15.5 16.0
Gain Flatness
f = 13.75 - 16.00 GHz
2.5 3 dB
Input Return Loss
f = 13.75 - 16.00 GHz
-10 -8 dB
Output Return Loss
f = 13.75 - 16.00 GHz
-10 -8 dB
Output TOI2)
Supply Current
Δf = 10 MHz
2-Tone Test
Output power / Tone = +33 dBm
VDD = +28 V
42
350
dBm
mA
1) Psat: Saturated output power
2) TOI: Third order intercept point
2.2 Product Specification
Test conditions : T = +25 C, VDD= +28 V, CW, VGG = -2.8 V typical, ZO = 50 
Parameter
Min Typ Max
Frequency
13.75
16.00
Small Signal Gain
15.5 16.0
Input Return Loss
-10 -8
Output Return Loss
-10 -8
Supply Current
350
Unit
GHz
dB
dB
dB
mA
2.3 Absolute Maximum Ratings
Parameters
Operating Case Temperature (Tc)
Storage Temperature (Tstg)
Drain Voltage (VDD)
Gate Voltage (VGG)
Input RF Power (Pin)
Max. Ratings
-40 to 85 C
-55 to 125 C
+35 V
-5.0 to -2.5 V
+35 dBm
2/48
ASB Inc. sales@asb.co.kr
Sept 2015



ASB AGN1540
2.4 Pin Descriptions
Preliminary AGN1540
Pin Pin Name
1,5 Vg
3 RF IN
6,10 Vd
8 RF OUT
2,4,7,9 NC
Description
Gate voltage
Input, matched to 50 ohms
Drain voltage
Output, matched to 50 ohms
No internal connection ( open
or connected to GND )
3/48
ASB Inc. sales@asb.co.kr
Sept 2015







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