N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4515GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simp...
Description
Advanced Power Electronics Corp.
AP4515GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic
D2
D2
D1 D1
▼ RoHS Compliant & Halogen-Free SO-8
N-CH
G2 S2
P-CH
G1
S1
Description
AP4515 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G2
S1
35V 22mΩ 7.7A -35V 40mΩ -5.7A
D2
S2
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
35 -35
V
VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +12 7.7 -5.7 6.2 -4.6 30 -30
2.0 -55 to 150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201409021
AP4515GM-HF
N-CH Electrical Characteristi...
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