POWER MOSFET. AP4515GM-HF Datasheet

AP4515GM-HF MOSFET. Datasheet pdf. Equivalent

AP4515GM-HF Datasheet
Recommendation AP4515GM-HF Datasheet
Part AP4515GM-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4515GM-HF; Advanced Power Electronics Corp. AP4515GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4515GM-HF Datasheet




Advanced Power Electronics AP4515GM-HF
Advanced Power
Electronics Corp.
AP4515GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
N-CH
G2
S2
P-CH
G1
S1
Description
AP4515 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
35V
22mΩ
7.7A
-35V
40mΩ
-5.7A
D2
S2
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS Drain-Source Voltage
35 -35
V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+20 +12
7.7 -5.7
6.2 -4.6
30 -30
2.0
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201409021



Advanced Power Electronics AP4515GM-HF
AP4515GM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=28V, VGS=0V
VGS=+20V, VDS=0V
ID=7A
VDS=32V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
f=1.0MHz
35 - - V
- - 22 mΩ
- - 36 mΩ
1 - 3V
- 12 -
S
- - 10 uA
- - +30 uA
- 11 18 nC
- 3.5 - nC
- 6 - nC
- 11 - ns
- 5 - ns
- 23 - ns
- 5 - ns
- 950 1520 pF
- 150 -
- 100 -
- 2.5 5
pF
pF
Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 12 - nC
2



Advanced Power Electronics AP4515GM-HF
AP4515GM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
-35 - - V
- - 40 mΩ
- - 70 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-28V, VGS=0V
IGSS Gate-Source Leakage
VGS=+12V, VDS=0V
Qg Total Gate Charge
ID=-5A
-8-S
- - -10 uA
- - +30 uA
- 10 16 nC
Qgs Gate-Source Charge
VDS=-25V
- 2 - nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
- 6 - nC
td(on) Turn-on Delay Time
VDS=-15V
- 10 - ns
tr Rise Time
td(off)
Turn-off Delay Time
ID=-1A
RG=3.3Ω
- 6 - ns
- 30 - ns
tf Fall Time
VGS=-5V
- 10 - ns
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V
VDS=-25V
- 700 1120 pF
- 175 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
.Rg Gate Resistance
f=1.0MHz
- 130 - pF
- 6 12 Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-5A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 19 - ns
- 13 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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