POWER MOSFET. AP4525GEH-HF Datasheet

AP4525GEH-HF MOSFET. Datasheet pdf. Equivalent

AP4525GEH-HF Datasheet
Recommendation AP4525GEH-HF Datasheet
Part AP4525GEH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4525GEH-HF; Advanced Power Electronics Corp. AP4525GEH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE.
Manufacture Advanced Power Electronics
Datasheet
Download AP4525GEH-HF Datasheet




Advanced Power Electronics AP4525GEH-HF
Advanced Power
Electronics Corp.
AP4525GEH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
N-CH
Fast Switching Performance
RoHS Compliant & Halogen-Free
S1 G1
S2
G2
P-CH
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
40V
28mΩ
15A
-40V
42m
-12A
D2
S1 S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TC=25
ID@TC=70
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
40 -40
±16 ±16
15.0 -12.0
12.0 -10.0
50 -50
10.4
0.083
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
12
110
Unit
/W
/W
1
201501166



Advanced Power Electronics AP4525GEH-HF
AP4525GEH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V
Gate-Source Leakage
VGS=±16V
Total Gate Charge
ID=6A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDS=20V
ID=6A
RG=3Ω,VGS=10V
Fall Time
RD=3.3Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
40 - - V
- 0.03 - V/
- - 28 m
- - 32 m
1 - 3V
-6-S
- - 1 uA
- - 25 uA
- - ±30 uA
- 9 14 nC
- 1.5 - nC
- 4 - nC
- 7 - ns
- 20 - ns
- 20 - ns
- 4 - ns
- 580 930 pF
- 100 - pF
- 70 - pF
- 2 3Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=15A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.8 V
- 20 - ns
- 15 - nC
2



Advanced Power Electronics AP4525GEH-HF
AP4525GEH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
Reference to 25,ID=-1mA
VGS=-10V, ID=-5A
-40 -
-V
- -0.03 - V/
- - 42 m
VGS=-4.5V, ID=-3A
- - 60 m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8 - -2.5 V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V
IGSS Gate-Source Leakage
VGS=±16V
Qg Total Gate Charge
ID=-5A
Qgs Gate-Source Charge
VDS=-20V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-20V
tr Rise Time
ID=-5A
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
tf Fall Time
RD=4Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-20V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 5 -S
- - -1 uA
- - -25 uA
- - ±30 uA
- 9 24 nC
- 2 - nC
- 5 - nC
- 8.5 - ns
- 15 - ns
- 27 - ns
- 25 - ns
- 770 1230 pF
- 165 - pF
- 115 - pF
Rg Gate Resistance
f=1.0MHz
- 6 9Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-5A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.8 V
- 20 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)