POWER MOSFET. AP4525GEH-A Datasheet

AP4525GEH-A MOSFET. Datasheet pdf. Equivalent

AP4525GEH-A Datasheet
Recommendation AP4525GEH-A Datasheet
Part AP4525GEH-A
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4525GEH-A; Advanced Power Electronics Corp. AP4525GEH-A RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MOD.
Manufacture Advanced Power Electronics
Datasheet
Download AP4525GEH-A Datasheet




Advanced Power Electronics AP4525GEH-A
Advanced Power
Electronics Corp.
AP4525GEH-A
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
Fast Switching Performance
Description
D1/D2
N-CH
S1
G1
S2
G2
P-CH
TO-252-4L
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
40V
26mΩ
8.3A
-40V
40m
-7A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient3
S1
Rating
N-channel P-channel
40 -40
±16 ±16
8.3 -7.0
6.6 -5.6
50 -50
3.125
0.025
-55 to 150
-55 to 150
Max.
Max.
Value
8
40
S2
Units
V
V
A
A
A
W
W/
Unit
/W
/W
Data and specifications subject to change without notice
200627071-1/7



Advanced Power Electronics AP4525GEH-A
AP4525GEH-A
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±16V
ID=6A
VDS=20V
VGS=4.5V
VDS=20V
ID=6A
RG=3Ω,VGS=10V
RD=3.3Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
40 -
-V
- 0.03 - V/
- - 26 mΩ
- - 32 mΩ
1 - 3V
-6-S
- - 1 uA
- - 25 uA
- - ±30 uA
- 9 14 nC
- 1.5 - nC
- 4 - nC
- 7 - ns
- 20 - ns
- 20 - ns
- 4 - ns
- 580 930 pF
- 100 - pF
- 70 - pF
- 2 3Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=15A, VGS=0V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 20 - ns
- 15 - nC
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Advanced Power Electronics AP4525GEH-A
AP4525GEH-A
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40 -
-
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-5A
Drain-Source Leakage Current (Tj=25oC)
VDS=-40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-32V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=±16V
ID=-5A
Gate-Source Charge
VDS=-20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-20V
- -0.03
--
--
-0.8 -
-5
--
--
--
-9
-2
-5
- 8.5
-
40
60
-2.5
-
-1
-25
±30
24
-
-
-
tr Rise Time
ID=-5A
- 15 -
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
- 27 -
tf Fall Time
RD=4Ω
- 25 -
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
- 760 1220
- 150 -
- 105 -
- 69
Units
V
V/
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-5A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 20 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
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