AP4525GEH-A

Advanced Power Electronics Corp. AP4525GEH-A RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance Description D1/D2 N-CH S1 G1 S2 G2 P-CH TO-252-4L BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 26mΩ 8.3A -40V 40mΩ -7A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Rthj-a Thermal Resistance Junction-case Thermal Resistance Junction-ambient3 S1 Rating N-channel P-channel 40 -40 ±16 ±16 8.3 -7.0 6.6 -5.6 50 -50 3.125 0.025 -55 to 150 -55 to 150 Max. Max. Value 8 40 S2 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W ℃/W Data and specifications subject to change without notice 200627071-1/7 AP4525GEH-A N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage T...