N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4525GEM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Sim...
Description
Advanced Power Electronics Corp.
AP4525GEM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance
D2
D2 D1 D1
▼ RoHS Compliant & Halogen-Free SO-8
Description
G2 S2 G1 S1
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
40V 28mΩ
6A -40V 42mΩ -5A
AP4525 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G1
D1 G2
S1
D2 S2
Absolute Maximum Ratings@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
40 +16 6.0 5.0 30
2.0 0.016
-40 +16 -5.0 -4.0 -30
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance, Junction-ambient3
Value 62.5
Unit ℃/W
Data and specifications subject to change without notice
1 201501076
AP4525GEM-HF...
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