N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4532GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simp...
Description
Advanced Power Electronics Corp.
AP4532GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic
D2
D2 D1 D1
▼ RoHS Compliant & Halogen-Free SO-8
G2 S2 G1 S1
Description
AP4532 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
30V 50mΩ
5A -30V 70mΩ -4A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch
S1
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
S2
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 -30 +20 +20
5 -4 4 -3.2 20 -20
2 0.016
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol Rthj-amb
Parameter Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value 62.5
Unit ℃/W
1 201501093
AP4532GM-HF
...
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