POWER MOSFET. AP4532GM-HF Datasheet

AP4532GM-HF MOSFET. Datasheet pdf. Equivalent

AP4532GM-HF Datasheet
Recommendation AP4532GM-HF Datasheet
Part AP4532GM-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4532GM-HF; Advanced Power Electronics Corp. AP4532GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4532GM-HF Datasheet




Advanced Power Electronics AP4532GM-HF
Advanced Power
Electronics Corp.
AP4532GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4532 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
50mΩ
5A
-30V
70mΩ
-4A
D2
The SO-8 package is widely preferred for all commercial-
G1
G2
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
S1
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
S2
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 -30
+20 +20
5 -4
4 -3.2
20 -20
2
0.016
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501093



Advanced Power Electronics AP4532GM-HF
AP4532GM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=4.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=5A
Gate-Source Charge
VDS=10V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time
VDS=10V
Rise Time
ID=1A
Turn-off Delay Time
RG=6Ω,VGS=10V
Fall Time
RD=10Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.037 - V/
- - 50 mΩ
- - 70 mΩ
1 - 3V
-8-S
- - 1 uA
- - 25 uA
- - +100 nA
- 10.2 - nC
- 1.2 - nC
- 3.4 - nC
- 6 - ns
- 9 - ns
- 15 - ns
- 5.5 - ns
- 240 -
- 145 -
- 55 -
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.7 A
- - 1.2 V
2



Advanced Power Electronics AP4532GM-HF
AP4532GM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance2
VGS=0V, ID=250uA
Reference to 25, ID=-1mA
VGS=-10V, ID=-4A
-30 - - V
- -0.028 - V/
- - 70 mΩ
VGS=-4.5V, ID=-3A
- - 90 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V
IGSS Gate-Source Leakage
VGS=+20V, VDS=0V
Qg Total Gate Charge
ID=-4A
Qgs Gate-Source Charge
VDS=-10V
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
td(on)
Turn-on Delay Time
VDS=-10V
- 5 -S
- - -1 uA
- - -25 uA
- - +100 nA
- 18.3 - nC
- 3.6 - nC
- 1.5 - nC
- 8 - ns
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
ID=-1A
RG=6Ω,VGS=-10V
RD=10Ω
VGS=0V
VDS=-25V
-9-
- 21 -
- 10 -
- 760 -
- 345 -
ns
ns
ns
pF
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 90 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25, IS=-1.7A, VGS=0V
Min. Typ. Max. Units
- - -1.7 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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