AP4532GM

Advanced Power Electronics Corp. AP4532GM RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 G2 S1 30V 50mΩ 5A -30V 70mΩ -4A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 30 -30 +20 +20 5 -4 4 -3.2 20 -20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201201302 AP4532GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Cis...