POWER MOSFET. AP4532GM Datasheet

AP4532GM MOSFET. Datasheet pdf. Equivalent

AP4532GM Datasheet
Recommendation AP4532GM Datasheet
Part AP4532GM
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4532GM; Advanced Power Electronics Corp. AP4532GM RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4532GM Datasheet





Advanced Power Electronics AP4532GM
Advanced Power
Electronics Corp.
AP4532GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
30V
50mΩ
5A
-30V
70mΩ
-4A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
+20 +20
5 -4
4 -3.2
20 -20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201201302



Advanced Power Electronics AP4532GM
AP4532GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=4.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
VGS=+20V, VDS=0V
ID=5A
VDS=10V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=10V
VDS=10V
Rise Time
Turn-off Delay Time
ID=1A
RG=6Ω,VGS=10V
Fall Time
Input Capacitance
RD=10Ω
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 - - V
- 0.037 - V/
- - 50 mΩ
- - 70 mΩ
1 - 3V
-8-S
- - 1 uA
- - 25 uA
- - +100 nA
- 10.2 - nC
- 1.2 - nC
- 3.4 - nC
- 6 - ns
- 9 - ns
- 15 - ns
- 5.5 - ns
- 240 - pF
- 145 - pF
- 55 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.7 A
- - 1.2 V
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Advanced Power Electronics AP4532GM
AP4532GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
-30 - - V
- -0.028 - V/
- - 70 mΩ
- - 90 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V
IGSS Gate-Source Leakage
Qg Total Gate Charge2
VGS=+20V, VDS=0V
ID=-4A
Qgs Gate-Source Charge
VDS=-10V
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
td(on)
Turn-on Delay Time2
VDS=-10V
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
tf Fall Time
RD=10Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 5 -S
- - -1 uA
- - -25 uA
- - +100 nA
- 18.3 - nC
- 3.6 - nC
- 1.5 - nC
- 8 - ns
- 9 - ns
- 21 - ns
- 10 - ns
- 760 - pF
- 345 - pF
- 90 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25, IS=-1.7A, VGS=0V
Min. Typ. Max. Units
- - -1.7 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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