POWER MOSFET. AP4539GM-HF Datasheet

AP4539GM-HF MOSFET. Datasheet pdf. Equivalent

AP4539GM-HF Datasheet
Recommendation AP4539GM-HF Datasheet
Part AP4539GM-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4539GM-HF; Advanced Power Electronics Corp. AP4539GM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE .
Manufacture Advanced Power Electronics
Datasheet
Download AP4539GM-HF Datasheet





Advanced Power Electronics AP4539GM-HF
Advanced Power
Electronics Corp.
AP4539GM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Performance
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
G2
S2
G1
S1
Description
AP4539 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
20V
11.5mΩ
10.4A
-20V
23mΩ
-7.5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20 -20
+16 +12
10.4 -7.5
8.3 -6
30 -30
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201209121



Advanced Power Electronics AP4539GM-HF
AP4539GM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=9A
VDS=16V, VGS=0V
VGS=+16V, VDS=0V
ID=9A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=10V
f=1.0MHz
f=1.0MHz
20 - - V
- 9.1 11.5 m
- 10.2 13.5 m
0.3 0.75 1.2 V
- 33 -
S
- - 10 uA
- - +100 nA
- 16 25.6 nC
- 2 - nC
- 5.5 - nC
- 6 - ns
- 20 - ns
- 31 - ns
- 19 - ns
- 1350 2160 pF
- 180 -
- 160 -
pF
pF
- 2.3 4.6 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 22 - ns
- 14 - nC
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Advanced Power Electronics AP4539GM-HF
AP4539GM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-7A
-20 -
-
- 18.3 23
VGS=-2.5V, ID=-4A
- 22.9 30
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.3 -0.6 -1.2
gfs
Forward Transconductance
VDS=-10V, ID=-7A
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
IGSS Gate-Source Leakage
VGS=+12V, VDS=0V
- 30 -
- - -10
- - +100
Qg Total Gate Charge
ID=-7A
- 28 44.8
Qgs Gate-Source Charge
VDS=-10V
-3-
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-9-
td(on)
Turn-on Delay Time
VDS=-10V
-9-
tr Rise Time
td(off)
Turn-off Delay Time
ID=-1A
RG=3.3Ω
- 26 -
- 100 -
tf Fall Time
VGS=-5V
- 56 -
Ciss Input Capacitance
VGS=0V
- 2450 3920
Coss Output Capacitance
VDS=-10V
- 320 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 300 -
Rg Gate Resistance
f=1.0MHz
- 48
Units
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 45 - ns
- 31 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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