POWER MOSFET. AP4533GEM-HF Datasheet

AP4533GEM-HF MOSFET. Datasheet pdf. Equivalent

AP4533GEM-HF Datasheet
Recommendation AP4533GEM-HF Datasheet
Part AP4533GEM-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4533GEM-HF; Advanced Power Electronics Corp. AP4533GEM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE.
Manufacture Advanced Power Electronics
Datasheet
Download AP4533GEM-HF Datasheet





Advanced Power Electronics AP4533GEM-HF
Advanced Power
Electronics Corp.
AP4533GEM-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Performance
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
SO-8
Description
G2
S2
G1
S1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
18mΩ
8.4A
-30V
36m
-6A
AP4533 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30 -30
+20 +20
8.4 -6.0
6.7 -4.8
30 -30
2.0
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Unit
/W
Data and specifications subject to change without notice
1
201501073



Advanced Power Electronics AP4533GEM-HF
AP4533GEM-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
VGS=4.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=8A
Drain-Source Leakage Current
VDS=24V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge
VGS=+20V, VDS=0V
ID=8A
Gate-Source Charge
VDS=15V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=15V
Rise Time
Turn-off Delay Time
Fall Time
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- - 18 m
- - 36 m
1 - 3V
- 13 -
S
- - 1 uA
- - 25 uA
- - +30 uA
- 6.5 10.5 nC
- 2.5 - nC
- 3.3 - nC
- 8 - ns
- 6 - ns
- 17 - ns
- 6 - ns
- 540 860 pF
- 150 - pF
- 90 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.5A, VGS=0V
IS=8A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 20 - ns
- 12 - nC
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Advanced Power Electronics AP4533GEM-HF
AP4533GEM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
-30 - - V
- - 36 m
- - 65 m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
VDS=-10V, ID=-6A
Drain-Source Leakage Current
VDS=-24V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=-6A
Gate-Source Charge
VDS=-15V
Gate-Drain ("Miller") Charge
VGS=-4.5V
Turn-on Delay Time
VDS=-15V
Rise Time
ID=-1A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
- 9.4 -
S
- - -1 uA
- - -25 uA
- - +30 uA
- 9 14.5 nC
- 2.5 - nC
- 5.5 - nC
- 8 - ns
- 9.5 - ns
- 20 - ns
- 20 - ns
- 500 800 pF
- 180 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.5A, VGS=0V
IS=-6A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 25 - ns
- 17 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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