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AP4537GYT-HF

Advanced Power Electronics

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP4537GYT-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Sim...


Advanced Power Electronics

AP4537GYT-HF

File Download Download AP4537GYT-HF Datasheet


Description
Advanced Power Electronics Corp. AP4537GYT-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D1/D2 N-CH ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free S1 G1 S2 G2 Description PMPAK® 3x3 P-CH AP4537 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 30V 30mΩ 7.3A -30V 60mΩ -5.3A D2 S2 Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 30 -30 +20 +20 7.3 -5.3 5.8 -4.2 28 -20 2.5 -55 to 150 -55 to 150 V V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 10 50 Un...




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