POWER MOSFET. AP4537GYT-HF Datasheet

AP4537GYT-HF MOSFET. Datasheet pdf. Equivalent

AP4537GYT-HF Datasheet
Recommendation AP4537GYT-HF Datasheet
Part AP4537GYT-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4537GYT-HF; Advanced Power Electronics Corp. AP4537GYT-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE.
Manufacture Advanced Power Electronics
Datasheet
Download AP4537GYT-HF Datasheet




Advanced Power Electronics AP4537GYT-HF
Advanced Power
Electronics Corp.
AP4537GYT-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
D1/D2 N-CH
Good Thermal Performance
Fast Switching Performance
RoHS
Compliant
&
Halogen-Free
S1
G1
S2
G2
Description
PMPAK® 3x3
P-CH
AP4537 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
The PMPAK ® 3x3 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
S1
30V
30mΩ
7.3A
-30V
60mΩ
-5.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
30 -30
+20 +20
7.3 -5.3
5.8 -4.2
28 -20
2.5
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
10
50
Unit
/W
/W
1
201410062AP



Advanced Power Electronics AP4537GYT-HF
AP4537GYT-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=4A
VGS=4.5V, ID=3A
VDS=VGS, ID=250uA
VDS=10V, ID=4A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=4A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
30 - - V
- - 30 mΩ
- - 48 mΩ
1 - 3V
- 8.5 -
S
- - 10 uA
- - +100 nA
- 4.5 7.2 nC
- 1 - nC
- 2.5 - nC
- 8 - ns
- 9 - ns
- 16 - ns
- 3 - ns
- 250 400 pF
- 55 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 15 - ns
- 7 - nC
2



Advanced Power Electronics AP4537GYT-HF
AP4537GYT-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
-30 -
--
-
60
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-24V, VGS=0V
VGS=+20V, VDS=0V
ID=-4A
VDS=-15V
- - 80
-1 - -3
-9-
- - -10
- - +100
- 7 11.2
- 1.5 -
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-15V
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3
- 3.5 -
- 10 -
- 11 -
- 22 -
tf Fall Time
VGS=-10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
.
-9-
- 570 910
- 80 -
- 75 -
Unit
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-4A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Unit
- - -1.2 V
- 19 - ns
- 13 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 90oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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