POWER MOSFET. AP4563AGH-HF Datasheet

AP4563AGH-HF MOSFET. Datasheet pdf. Equivalent

AP4563AGH-HF Datasheet
Recommendation AP4563AGH-HF Datasheet
Part AP4563AGH-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4563AGH-HF; Advanced Power Electronics Corp. AP4563AGH-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE.
Manufacture Advanced Power Electronics
Datasheet
Download AP4563AGH-HF Datasheet





Advanced Power Electronics AP4563AGH-HF
Advanced Power
Electronics Corp.
AP4563AGH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
Fast Switching Performance
RoHS Compliant & Halogen-Free
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
40V
20mΩ
9.6A
-40V
36m
-7.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3 , VGS @ 10V
Drain Current3 , VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
40 -40
+20 +20
9.6 -7.3
7.7 -5.8
40 -40
3.13
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
6
40
Unit
/W
/W
1
201412193AP



Advanced Power Electronics AP4563AGH-HF
AP4563AGH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=7A
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
ID=7A
VDS=32V
VGS=4.5V
VDS=20V
ID=7A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
40 - - V
- - 20 m
- - 30 m
1 - 3V
- 17 -
S
- - 10 uA
- - +100 nA
- 13.5 21.6 nC
- 3 - nC
- 8 - nC
- 7 - ns
- 18 - ns
- 22 - ns
- 6 - ns
- 960 1540 pF
- 105 - pF
- 90 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.6A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 16 - nC
2



Advanced Power Electronics AP4563AGH-HF
AP4563AGH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VGS=0V, ID=-250uA
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-7A
VDS=-40V, VGS=0V
VGS=+20V, VDS=0V
ID=-7A
-40 -
-
- - 36
- - 60
-1 - -3
- 19 -
- - -10
- - +100
- 17.5 28
Qgs Gate-Source Charge
VDS=-32V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-20V
- 3.5 -
- 10 -
- 8.5 -
tr Rise Time
ID=-7A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf Fall Time
VGS=-10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
.
- 17.5 -
- 39 -
- 44 -
- 1360 2180
- 155 -
- 140 -
Units
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.6A, VGS=0V
IS=-7A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 25 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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