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POWER MOSFET. AP4575GH-HF Datasheet

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POWER MOSFET. AP4575GH-HF Datasheet






AP4575GH-HF MOSFET. Datasheet pdf. Equivalent




AP4575GH-HF MOSFET. Datasheet pdf. Equivalent





Part

AP4575GH-HF

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


Advanced Power Electronics Corp. AP4575 GH-HF Halogen-Free Product N AND P-CHAN NEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Therm al Performance D1/D2 ▼ Fast Switchi ng Performance ▼ RoHS Compliant & Ha logen-Free S1 G1 S2 G2 Description T O-252-4L Advanced Power MOSFETs from A PEC provide the designer with the best combination of fast switch.
Manufacture

Advanced Power Electronics

Datasheet
Download AP4575GH-HF Datasheet


Advanced Power Electronics AP4575GH-HF

AP4575GH-HF; ing, ruggedized device design, low on-re sistance and costeffectiveness. N-CH P -CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 S1 60V 36mΩ 6.6A -60V 75m Ω -4.7A D2 S2 Absolute Maximum Rating s@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-cha nnel P-channel VDS VGS ID@TA=25℃ ID@ TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain -Source Voltage Gate-Sourc.


Advanced Power Electronics AP4575GH-HF

e Voltage Drain Current3 Drain Current3 Pulsed Drain Current1 Total Power Dissi pation Storage Temperature Range Operat ing Junction Temperature Range 60 -60 +20 +20 6.6 -4.7 5.3 -3.8 20 -20 3.13 - 55 to 150 -55 to 150 V V A A A W ℃ Thermal Data Symbol Parameter Rt hj-c Rthj-a Maximum Thermal Resistance , Junction-case Maximum Thermal Resista nce, Junction-ambient3.


Advanced Power Electronics AP4575GH-HF

Data and specifications subject to cha nge without notice Value 6 40 Unit /W ℃/W 1 201501162 AP4575GH-HF N- CH Electrical Characteristics@ Tj=25oC( unless otherwise specified) Symbol BVD SS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crs s Rg Parameter Test Conditions Drain -Source Breakdown Voltage Static Drain- Source On-Resistance2 .

Part

AP4575GH-HF

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


Advanced Power Electronics Corp. AP4575 GH-HF Halogen-Free Product N AND P-CHAN NEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Therm al Performance D1/D2 ▼ Fast Switchi ng Performance ▼ RoHS Compliant & Ha logen-Free S1 G1 S2 G2 Description T O-252-4L Advanced Power MOSFETs from A PEC provide the designer with the best combination of fast switch.
Manufacture

Advanced Power Electronics

Datasheet
Download AP4575GH-HF Datasheet




 AP4575GH-HF
Advanced Power
Electronics Corp.
AP4575GH-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Good Thermal Performance
D1/D2
Fast Switching Performance
RoHS Compliant & Halogen-Free
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
60V
36mΩ
6.6A
-60V
75mΩ
-4.7A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3
Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60 -60
+20 +20
6.6 -4.7
5.3 -3.8
20 -20
3.13
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
6
40
Unit
/W
/W
1
201501162




 AP4575GH-HF
AP4575GH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=250uA
VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current
VDS=10V, ID=5A
VDS=48V, VGS=0V
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=+20V, VDS=0V
ID=5A
VDS=48V
VGS=4.5V
VDS=30V
ID=5A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
Min. Typ. Max. Units
60 - - V
- - 36 m
- - 42 mΩ
1 - 3V
- 12.5 -
S
- - 10 uA
- - +100 nA
- 12 19.2 nC
- 3 - nC
- 7 - nC
- 7 - ns
- 10.5 - ns
- 23 - ns
- 5 - ns
- 975 1560 pF
- 75 - pF
- 65 - pF
- 1.6 3.2 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2.4A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 23 - ns
- 22 - nC
2




 AP4575GH-HF
AP4575GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
VGS=0V, ID=-250uA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=VGS, ID=-250uA
-60 - - V
- - 75 m
- - 90 mΩ
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
IGSS Gate-Source Leakage
VGS=+20V, VDS=0V
Qg Total Gate Charge
ID=-3A
Qgs Gate-Source Charge
VDS=-48V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time
VDS=-30V
tr Rise Time
ID=-3A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf Fall Time
VGS=-10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 11 -
S
- - -10 uA
- - +100 nA
- 14 22.4 nC
- 2.5 - nC
- 8 - nC
- 9 - ns
- 9.5 - ns
- 42 - ns
- 28 - ns
- 1000 1600 pF
- 125 - pF
- 95 - pF
Rg Gate Resistance
f=1.0MHz
- 1.6 3.2 Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.4A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 30 - ns
- 45 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3






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