POWER MOSFET. AP4578GD Datasheet

AP4578GD MOSFET. Datasheet pdf. Equivalent

AP4578GD Datasheet
Recommendation AP4578GD Datasheet
Part AP4578GD
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4578GD; Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package D2 D2 D.
Manufacture Advanced Power Electronics
Datasheet
Download AP4578GD Datasheet




Advanced Power Electronics AP4578GD
Advanced Power
Electronics Corp.
Low Gate Charge
Fast Switching Speed
PDIP-8 Package
D2
D2
D1
D1
RoHS Compliant
Description
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4578GD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
60V
64mΩ
4.5A
-60V
125mΩ
-3A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
60 -60
±20 ±20
4.5 -3
3.6
20
2.0
-2.4
-20
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200616051-1/7



Advanced Power Electronics AP4578GD
AP4578GD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=4A
VGS=4.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=4A
VDS=60V, VGS=0V
VDS=48V, VGS=0V
VGS=±20V
ID=4A
VDS=48V
VGS=4.5V
VDS=30V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=30Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- 0.05 - V/
- 50 64 mΩ
- 63 80 mΩ
1 - 3V
-7-S
- - 10 uA
- - 25 uA
- - ±100 nA
- 9 17 nC
- 3 - nC
- 4 - nC
- 9 - ns
- 5 - ns
- 22 - ns
- 7 - ns
- 730 1170 pF
- 80 - pF
- 60 - pF
- 1.8 2.7 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=4A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 28 - ns
- 39 - nC
2/7



Advanced Power Electronics AP4578GD
AP4578GD
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-3A
VGS=-4.5V, ID=-2A
-60 - - V
- -0.04 - V/
- 95 125 mΩ
- 115 150 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-10V, ID=-2A
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V
VGS=±20V
ID=-3A
VDS=-48V
VGS=-4.5V
VDS=-30V
ID=-1A
RG=3.3Ω,VGS=-10V
RD=30Ω
VGS=0V
VDS=-25V
f=1.0MHz
f=1.0MHz
- 5 -S
- - -10 uA
- - -25 uA
- - ±100 nA
- 12 20 nC
- 2 - nC
- 6 - nC
- 10 - ns
- 6 - ns
- 33 - ns
- 6 - ns
- 905 1450 pF
- 90 - pF
- 75 - pF
- 12 18 Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-3A, VGS=0V
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 36 - ns
- 55 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 90/W when mounted on min. copper pad.
3/7





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