N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP4604P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive R...
Description
Advanced Power Electronics Corp.
AP4604P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP4604 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON) ID3
40V 3.7mΩ 140A
G D S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
40 V +20 V 140 A 80 A 80 A 400 A
PD@TC=25℃ PD@TA=25℃ TSTG
Total Power Dissipation Total Power Dissipation Storage Temperature Range
150 2.4 -55 to 175
W W ℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 1 62
Units ℃/W ℃/W
1 201412181
AP4604P
Electr...
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