POWER MOSFET. AP4604P Datasheet

AP4604P MOSFET. Datasheet pdf. Equivalent

AP4604P Datasheet
Recommendation AP4604P Datasheet
Part AP4604P
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4604P; Advanced Power Electronics Corp. AP4604P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSF.
Manufacture Advanced Power Electronics
Datasheet
Download AP4604P Datasheet




Advanced Power Electronics AP4604P
Advanced Power
Electronics Corp.
AP4604P
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Ultra-low On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP4604 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
BVDSS
RDS(ON)
ID3
40V
3.7mΩ
140A
G
D
S
TO-220(P)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
40 V
+20 V
140 A
80 A
80 A
400 A
PD@TC=25
PD@TA=25
TSTG
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
150
2.4
-55 to 175
W
W
TJ
Operating Junction Temperature Range
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1
62
Units
/W
/W
1
201412181



Advanced Power Electronics AP4604P
AP4604P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=32V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
VDS=32V
VGS=10V
VDS=20V
ID=40A
RG=3.3Ω
VGS=10V
VGS=0V
VDS=25V
.f=1.0MHz
f=1.0MHz
40 - - V
- - 3.7 m
2 - 4V
- 118 -
S
- - 10 uA
- - +100 nA
- 103 165 nC
- 16 - nC
- 44 - nC
- 20 - ns
- 80 - ns
- 50 - ns
- 32 - ns
- 5380 8600 pF
- 1020 - pF
- 330 - pF
- 1.2 -
Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=40A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 40 - ns
- 46 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4604P
AP4604P
400
T C = 25 o C
300
200
10V
9.0V
8.0V
7.0V
6.0V
100 V G =5.0V
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
20
Fig 1. Typical Output Characteristics
200
T C = 175 o C
10V
9.0V
160 8.0V
7.0V
6.0V
120 V G =5.0V
80
40
0
0 2 4 6 8 10 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
I D =40A
T C =25 o C
8
6
.
4
2
4 5 6 7 8 9 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
40
30
T j =175 o C
T j =25 o C
20
10
2.8
I D =40A
2.4 V G =10V
2.0
1.6
1.2
0.8
0.4
-100
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =1mA
1.6
200
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-100 -50 0 50 100 150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3





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