AP4800GEM

Advanced Power Electronics Corp. AP4800GEM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free D D D D SO-8 SG S S Description AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID G 30V 18mΩ 9.2A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS .Parameter Drain-Source Voltage Rating 30 Units V VGS Gate-Source Voltage +20 V ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 9.2 A 7.3 A IDM Pulsed Drain Current1 50 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 50 Unit ℃/W 1 201408181 AP4800GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th...