POWER MOSFET. AP4800GEM Datasheet

AP4800GEM MOSFET. Datasheet pdf. Equivalent

AP4800GEM Datasheet
Recommendation AP4800GEM Datasheet
Part AP4800GEM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4800GEM; Advanced Power Electronics Corp. AP4800GEM Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MO.
Manufacture Advanced Power Electronics
Datasheet
Download AP4800GEM Datasheet




Advanced Power Electronics AP4800GEM
Advanced Power
Electronics Corp.
AP4800GEM
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Fast Switching Characteristic
Low On-resistance
RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
SG
S
S
Description
AP4800 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
BVDSS
RDS(ON)
ID
G
30V
18mΩ
9.2A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
.Parameter
Drain-Source Voltage
Rating
30
Units
V
VGS Gate-Source Voltage
+20 V
ID@TA=25
ID@TA=70
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
9.2 A
7.3 A
IDM Pulsed Drain Current1
50 A
PD@TA=25
Total Power Dissipation
2.5 W
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
/W
1
201408181



Advanced Power Electronics AP4800GEM
AP4800GEM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=9A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=5A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3
VGS=10V
VGS=0V
VDS=15V
.f=1.0MHz
f=1.0MHz
30 - - V
- 13.2 18 mΩ
- 19.4 30 mΩ
1 1.5 3
V
- 24 -
S
- - 10 uA
- - +30 uA
- 7 11.2 nC
- 1.8 - nC
- 3 - nC
- 5 - ns
- 19 - ns
- 15 - ns
- 19 - ns
- 800 1280 pF
- 105 - pF
- 75 - pF
- 1.3 2.6 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 13 - ns
- 5 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4800GEM
AP4800GEM
60
T A = 25 o C
50
40 10V
7.0V
6.0V
30 5.0V
V G = 4.0V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
T A = 150 o C
30 10V
7.0V
6.0V
5.0V
20 V G = 4.0V
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
24
I D =5A
22 T A =25 o C
20
18
.
16
14
12
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
2.0
ID=9A
V G =10V
1.6
1.2
0.8
0.4
-100
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
1.2
4 0.8
2 0.4
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0.0
-100
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3





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