POWER MOSFET. AP4800N2 Datasheet

AP4800N2 MOSFET. Datasheet pdf. Equivalent

AP4800N2 Datasheet
Recommendation AP4800N2 Datasheet
Part AP4800N2
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4800N2; Advanced Power Electronics Corp. AP4800N2 Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOS.
Manufacture Advanced Power Electronics
Datasheet
Download AP4800N2 Datasheet





Advanced Power Electronics AP4800N2
Advanced Power
Electronics Corp.
AP4800N2
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Fast Switching Characteristic
Small Size & Lower Profile
Halogen Free & RoHS Compliant Product
G
Description
AP4800 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D BVDSS
RDS(ON)
ID
30V
18mΩ
9A
S
D
D
G
Top view
D
D
S
D
D
D
S
S
DFN 2x2 D D G
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3 @ VGS=10V
Drain Current3 @ VGS=10V
Pulsed Drain Current1
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
30
+20
9
7.2
40
2.4
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
52
Unit
/W
1
201503171



Advanced Power Electronics AP4800N2
AP4800N2
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=9A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=9A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=5A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=10V
.VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- 14 18 mΩ
- 20 30 mΩ
1 1.5 3 V
- 24 -
S
- - 10 uA
- - +30 uA
- 7 11.2 nC
- 1.8 - nC
- 3 - nC
- 5 - ns
- 19 - ns
- 15 - ns
- 19 - ns
- 800 1280 pF
- 105 - pF
- 75 - pF
- 1.3 2.6 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=2A, VGS=0V
IS=9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 13 - ns
- 5 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 250oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4800N2
AP4800N2
60
T A = 25 o C
50
40
30
10V
7.0V
6.0V
5.0V
V G = 4.0V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
T A = 150 o C
10V
7.0V
6.0V
30 5.0V
V G = 4.0V
20
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
22 2.0
ID=5A
ID=9A
T A =25
V G = 10 V
20
1.6
18
. 1.2
16
0.8
14
12
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
0.4
-100
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
I D =250uA
1.6
150
6
4 T j =150 o C T j =25 o C
1.2
0.8
2 0.4
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0.0
-100 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)