POWER MOSFET. AP4820AGYT-HF Datasheet

AP4820AGYT-HF MOSFET. Datasheet pdf. Equivalent

AP4820AGYT-HF Datasheet
Recommendation AP4820AGYT-HF Datasheet
Part AP4820AGYT-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4820AGYT-HF; Advanced Power Electronics Corp. AP4820AGYT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWE.
Manufacture Advanced Power Electronics
Datasheet
Download AP4820AGYT-HF Datasheet





Advanced Power Electronics AP4820AGYT-HF
Advanced Power
Electronics Corp.
AP4820AGYT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Size & Lower Profile
D
RoHS Compliant & Halogen-Free
G
S
Description
AP4820A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
BVDSS
RDS(ON)
ID
30V
8.5mΩ
15A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.Parameter
Rating
Units
VDS Drain-Source Voltage
30 V
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
+20 V
15 A
12 A
50 A
PD@TA=25
Total Power Dissipation
3.13 W
TSTG
Storage Temperature Range
-55 to 150
TJ Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
4
40
Unit
/W
/W
1
201501293



Advanced Power Electronics AP4820AGYT-HF
AP4820AGYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=12A
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
ID=12A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω
VGS=5V
VGS=0V
VDS=15V
.f=1.0MHz
f=1.0MHz
30 - - V
- 6.4 8.5 m
- 11.3 15 m
1 1.55 2.5 V
- 34 -
S
- - 10 uA
- - +100 nA
- 9 14.4 nC
- 2.6 - nC
- 5 - nC
- 13 - ns
- 12 - ns
- 16 - ns
- 8.5 - ns
- 795 1270 pF
- 230 - pF
- 125 - pF
- 24
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=2.6A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 23 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4820AGYT-HF
AP4820AGYT-HF
60
T A =25 o C
10V
7.0V
50 6.0V
5.0V
40 V G =4.0V
30
20
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
T A = 150 o C
10V
7.0V
50 6.0V
5.0V
40 V G =4.0V
30
20
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
14
ID=8A
T A =25
12
2.4
I D =12A
V G =10V
2.0
1.6
.10
1.2
8
0.8
6
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
8
T j =150 o C
T j =25 o C
4
0
000111
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2.0
I D =250uA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3





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