POWER MOSFET. AP4920GM-HF Datasheet

AP4920GM-HF MOSFET. Datasheet pdf. Equivalent

AP4920GM-HF Datasheet
Recommendation AP4920GM-HF Datasheet
Part AP4920GM-HF
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4920GM-HF; Advanced Power Electronics Corp. AP4920GM-HF Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4920GM-HF Datasheet





Advanced Power Electronics AP4920GM-HF
Advanced Power
Electronics Corp.
AP4920GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
25V
25mΩ
7A
Description
AP4920 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D1
G2
S1
D2
S2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
25 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
+20
7
5.7
20
2
0.016
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Unit
/W
Data and specifications subject to change without notice
1
201501093



Advanced Power Electronics AP4920GM-HF
AP4920GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=7A
Drain-Source Leakage Current
VDS=25V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=20V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=7A
Gate-Source Charge
VDS=15V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=6Ω,VGS=10V
Fall Time
RD=15Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
25 - - V
- 0.037 - V/
- - 25 m
- - 35 m
1 - 3V
- 14 - S
- - 1 uA
- - 25 uA
- - +100 nA
- 10.5 - nC
- 1.9 - nC
- 7.5 - nC
- 8 - ns
- 9.5 - ns
- 25 - ns
- 13.5 - ns
- 395 -
- 260 -
- 105 -
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=2.1A, VGS=0V
Min. Typ. Max. Units
- - 1.67 A
- - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4920GM-HF
AP4920GM-HF
20
T A =25 o C
10V
8.0V
6.0V
15 5.0V
V GS = 4 .0V
10
5
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
T A =150 o C
15
10
10V
8.0V
6.0V
5.0V
V GS = 4 .0V
5
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
50
I D =7A
T A =25
40
30
20
10
3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D =7A
1.6 V GS =10
V
1.4
1.2
1.0
0.8
0.6
-50 0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3





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