POWER MOSFET. AP4951GM-HF Datasheet

AP4951GM-HF MOSFET. Datasheet pdf. Equivalent

AP4951GM-HF Datasheet
Recommendation AP4951GM-HF Datasheet
Part AP4951GM-HF
Description DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4951GM-HF; Advanced Power Electronics Corp. AP4951GM-HF Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4951GM-HF Datasheet





Advanced Power Electronics AP4951GM-HF
Advanced Power
Electronics Corp.
AP4951GM-HF
Halogen-Free Product
DUAL P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
-60V
96mΩ
-3.4A
Description
AP4951 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D1
G2
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
S1 S2
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
-60
+20
-3.4
-2.7
-20
2
0.016
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501125



Advanced Power Electronics AP4951GM-HF
AP4951GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-3.4A
VGS=-4.5V, ID=-2.7A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-3.4A
Drain-Source Leakage Current
VDS=-60V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-48V, VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge
ID=-3A
Gate-Source Charge
VDS=-48V
Gate-Drain ("Miller") Charge
VGS=-10V
Turn-on Delay Time
VDS=-30V
Rise Time
ID=-1A
Turn-off Delay Time
RG=3.3,VGS=-10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=30
VGS=0V
VDS=-25V
f=1.0MHz
-60 - - V
- -0.04 - V/
- - 96 mΩ
- - 120 mΩ
-1 - -3 V
- 3.4 -
S
- - -1 uA
- - -25 uA
- - +100 nA
- 29.5 - nC
- 3 - nC
- 7 - nC
- 11 20 ns
- 5 10 ns
- 39 80 ns
- 10.5 20 ns
- 1320 - pF
- 125 - pF
- 95 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-2.1A, VGS=0V
IS=-3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 39 80 ns
- 64 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



Advanced Power Electronics AP4951GM-HF
40
T A =25 o C
30
-10V
-7.0V
-5.0V
-4.5V
20
V G =-3.0V
10
0
0 2 4 6 8 10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I D = -2.7A
T A =25
90
80
70
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.00
8.00
T j =150 o
T j =25 o C
C6.00
4.00
2.00
0.00
0.2
0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
30
T A =150 o C
20
10
AP4951GM-HF
-10V
-7.0V
-5.0V
-4.5V
V G =- 3 .0V
0
0 2 4 6 8 10 12
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D = -3.4A
V G = -10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
150
1.6
1.4
1.2
1
0.8
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3





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