AP4951GM-HF

Advanced Power Electronics Corp. AP4951GM-HF Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D2 D2 D1 D1 SO-8 G2 S2 G1 S1 BVDSS RDS(ON) ID -60V 96mΩ -3.4A Description AP4951 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 D1 G2 D2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow S1 S2 technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor -60 +20 -3.4 -2.7 -20 2 0.016 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201501125 AP4951GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter T...