Barrier Diode. 1SS413 Datasheet

1SS413 Diode. Datasheet pdf. Equivalent

1SS413 Datasheet
Recommendation 1SS413 Datasheet
Part 1SS413
Description Schottky Barrier Diode
Feature 1SS413; Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging .
Manufacture Toshiba
Datasheet
Download 1SS413 Datasheet




Toshiba 1SS413
Schottky Barrier Diode Silicon Epitaxial
1SS413
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS413
1: Cathode
2: Anode
1: Cathode
2: Anode
Start of commercial production
2002-11
1 2014-07-09
Rev.3.0



Toshiba 1SS413
1SS413
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
25 V
Reverse voltage
VR 20
Peak forward current
IFM 100 mA
Average rectified current
IO 50 mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Forward voltage
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
VF(3)
IR
Ct
IF = 1 mA
IF = 5 mA
IF = 50 mA
VR = 20 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.33
V
0.38
V
0.50 0.55 V
  0.5 µA
3.9 pF
5. Marking
Fig. 5.1 Marking
2 2014-07-09
Rev.3.0



Toshiba 1SS413
1SS413
6. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 SOD-923 (Unit: mm)
Fig. 7.2 fSC (Unit: mm)
3 2014-07-09
Rev.3.0





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