1SS413

Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2002-11 1 2014-07-09 Rev.3.0 1SS413 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW Non-repetitive peak forward surge current IFSM (Note 2) 1 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm. Note 2: Measured with a 10 ms pulse. 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics For...