Silicon Diode. 1SS416CT Datasheet

1SS416CT Diode. Datasheet pdf. Equivalent

1SS416CT Datasheet
Recommendation 1SS416CT Datasheet
Part 1SS416CT
Description Silicon Diode
Feature 1SS416CT; TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT 1SS416CT High Speed Switching Appli.
Manufacture Toshiba
Datasheet
Download 1SS416CT Datasheet




Toshiba 1SS416CT
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
1SS416CT
High Speed Switching Application
z Small package
z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P*
35 V
30 V
200 mA
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
Operating temperature range
Topr
40 to 100
°C
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
CST2
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR(1)
IR(2)
CT
Test
Circuit
Test Condition
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 30 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.18
0.23
V
0.38 0.50
― ― 20
μA
― ― 50
15 pF
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Toshiba 1SS416CT
Marking
W
Equivalent Circuit (top view)
1SS416CT
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Toshiba 1SS416CT
1SS416CT
110000m
1100m
11m
IFF- VVFF
Ta=1 00°C
75°C
50 °C
25°C
0°C
25°C
100.01uμ
0 .1001uμ
0
100
0.1 0.2 0.3 0.4
FOFROWRAWRADRVDOLVTOAGLTEAVGFE(V)VF (V)
0.5
CT CT -VVRR
Ta=2 5°C
f=1MHz
10101mm0 Ta=100°C
11000uμ
100uμ
1u1μ
1000n
IR IR V- VRR
7 5°C
5 0°C
2 5°C
0 °C
25°C
100n
10n
0 10 20
RERVEEVERRSSEEVVOOLLTTAAGGEE VVRR(V(V) )
30
Mounted on a glass epoxy
circuit board of 20 x 20 mm,
pad dimension 4 x 4 mm.
10
1
0 5 10 15 20 25 30
RREEVVEERRSSEE VVOOLLTTAAGGEE VVRR(V(V) )
3 2009-01-08





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