1SS419

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V sESC Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P* 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C JEDEC ― Operating temperature range Topr −40~100 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance ...