Silicon Diode. 1SS426 Datasheet

1SS426 Diode. Datasheet pdf. Equivalent

1SS426 Datasheet
Recommendation 1SS426 Datasheet
Part 1SS426
Description Silicon Diode
Feature 1SS426; TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compac.
Manufacture Toshiba
Datasheet
Download 1SS426 Datasheet





Toshiba 1SS426
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS426
Ultra-High Speed Switching Applications
z Compact 2-pin package: Ideal for high-density mounting
z Low forward voltage
: VF (3) = 0.98 V (typ.)
z Fast reverse recovery time : trr = 1.6 ns (typ.)
z Small total capacitance : CT = 0.5 pF (typ.)
1SS426
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
85
80
200
100
1
150 *
150
55 to 150
V
V
mA
mA
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 1.1 mg (typ.)
* : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1 MHz
IF = 10mA, Fig.1
Min Typ. Max Unit
0.62
0.75
V
0.98 1.20
― ― 0.1
μA
― ― 0.5
0.5 pF
1.6 ns
1 2008-01-30



Toshiba 1SS426
Fig.1 Reverse Recovery Time (trr) Test Circuit
Pin Assignment
(top view)
Marking
V
1SS426
2 2008-01-30



Toshiba 1SS426
1SS426
P – Ta
200
Mounted on a glass epoxy circuit
board of 20mm×20mm,
Cu pad dimension of 4mm×4mm
150
100
50
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
3 2008-01-30





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