1SS426

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.) 1SS426 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 85 80 200 100 1 150 * 150 −55 to 150 V V mA mA A mW °C °C JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 1.1 mg (typ.) * : Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Cu pad dimension of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forward ...