TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS421
1SS421
High-Speed Switching Application
Low forward voltage: VF (3) = 0.50V (max)
Abusolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VR IFM IO IFSM P*
30 V 300 mA 200 mA
1A 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature ran.