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1SS421 Dataheets PDF



Part Number 1SS421
Manufacturers Toshiba
Logo Toshiba
Description Silicon Diode
Datasheet 1SS421 Datasheet1SS421 Datasheet (PDF)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Low forward voltage: VF (3) = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P* 30 V 300 mA 200 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature ran.

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1SS420 1SS421 1SS422


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