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1SS422

Silicon Diode

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA Small package suitable for mounting on a small space 1SS422 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forwa...

Toshiba

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