1SS420CT

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.38 +0.02 -0.03 0.5±0.03 0.05±0.03 Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P 200 1 150 * mA A mW Junction temperature Storage temperature range Tj 125 °C Tstg −55 to 125 °C CST2 Operating temperature range Topr −40 to 100 °C JEDEC ― * Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, JEITA ― pad dimensions of 4 mm × 4 mm. TOSHIBA 1-1P1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.7 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Forw...