Silicon Diode. 1SS420CT Datasheet
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Maximum (peak) reverse voltage
VR 30 V
Maximum (peak) forward current IFM 300 mA
Average forward current
Surge current (10 ms)
Storage temperature range
Tj 125 °C
−55 to 125
Operating temperature range
Topr −40 to 100 °C JEDEC
* Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
pad dimensions of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.7 mg (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
― IF = 1 mA
― IF = 10 mA
― IF = 200 mA
― VR = 30 V
― VR = 0 V, f = 1 MHz
Min Typ. Max Unit
― 0.29 ―
― 0.36 ―
― 0.52 0.6
― ― 5 μA
― 20 ― pF
Equivalent Circuit (top view)
Ta = 100°C
0.2 0.4 0.6
Ta = 25°C
f = 1MHz
Ta = 100°C
5 10 15 20 25
RERVEEVRESRESEVVOOLTLTAAGGEE VRR( V(V) )
0 10 20 30
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