Lateral DMOS. UPF18060 Datasheet

UPF18060 DMOS. Datasheet pdf. Equivalent

UPF18060 Datasheet
Recommendation UPF18060 Datasheet
Part UPF18060
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
Feature UPF18060; ™ UPF18060 60W, 1.88GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for.
Manufacture UltraRF
Datasheet
Download UPF18060 Datasheet





UltraRF UPF18060
UPF18060
60W, 1.88GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral DMOS
Designed for DCS base station applications in the frequency band 1805 to 1880 GHz. Rated with a
minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers
in Class A or AB operation.
• ALL GOLD metal system for highest reliability
• Industry standard package
• Suggested alternative to the MRF18060
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
Application Specific Performance, 1.88 GHz
GSM:
60 Watts
EDGE:
25 Watts
IS95 CDMA:
7.5 Watts
W-CDMA:
5 Watts
13 dB
12.5 dB
12.5 dB
12.5 dB
Package Type 440117
6
Typical EDGE Performance (ETSI 300-910 GSM 05.05 v. 5.5.1)
Average Load Power – 20 W
PAE – 30 %
Power Gain – 12.5 dB
ACPR1 (30 kHz BW offset ± 400 kHz normalized to
total power in a 30 kHz BW): -57 dBc
ACPR2 (30 kHz BW offset ± 600 kHz normalized to
total power in a 30 kHz BW): -66 dBc
Package Type 440133
6-1



UltraRF UPF18060
UPF18060
Maximum Ratings
Rating
Drain to Source Voltage,
Gate connected to Source
Gate to Source Voltage
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
Symbol
BVDSS
BVGSS
PD
TSTG
TJ
Value
65
+15 to -0.5
100
0.8
-65 to +150
200
Unit
Volts
Volts
Watts
W/°C
°C
°C
Thermal Characteristics
Characteristics
Symbol
Maximum
Unit
Thermal Resistance, Junction to Case
6
ΘJC 1.2
Electrical DC Characteristics (TC=25°C unless otherwise specified)
°C/W
Rating
Symbol
Min Typ Max Unit
Drain to Source Voltage,
gate connected to source
(VGS=0, IDS=1mA)
Drain to Source Leakage current
(VDS=28V, VGS=0)
Gate to Source Leakage current
(VGS=15V, VDS=0)
Threshold Voltage
(VDS=10V, IDS=1mA)
Gate Quiescent Voltage
(VDS=26 V, IDS=540mA)
Drain to Source On Voltage
(VGS=10V, IDS=1A)
Forward Transconductance
(VDS=10V, ID=5A)
BVDSS
IDSS
IGSS
VTH
VGS(on)
VDS(on)
Gm
65 - - Volts
-
- 2.0
mA
-
- 2.0
µA
- 3.5 - Volts
3.0 4.0 5.0 Volts
- 0.14
Volts
- 3.0 -
S
6-2



UltraRF UPF18060
UPF18060
AC Characteristics (TC=25°C unless otherwise specified)
Rating
Symbol
Min
Output Capacitance*
(VDS=26V, VGS=0V, freq= 1MHz)
Feedback Capacitance
(VDS=26V, VGS=0V, freq= 1MHz)
COSS
CRSS
-
-
* For reference only.
Typ Max
52 -
3.0 -
Unit
pF
pF
RF and Functional Tests (TC=25°C unless otherwise specified, UltraRF Test Fixture)
Rating
Symbol
Min Typ Max Unit
Two-Tone Common-Source Amplifier
Power Gain
VDD=26V, IDQ=540mA, POUT=60W PEP
f1=1805 MHz, and 1880 MHz,
Tone Spacing = 100kHz
GPS
12.0 12.5
-
dB
Two-Tone Drain Efficiency
VDD=26V, POUT=60W PEP, IDQ=540mA
f =1805 MHz and 1880 MHz,
Tone Spacing = 100kHz
η
30 33 -
%
POUT, 1dB Compression Point
VDD=26V, POUT=60W CW, f =1880 MHz
Input Return Loss
VDD=26V, POUT=60W PEP, IDQ=540mA
f =1805 MHz and 1880MHz, Tone
Spacing = 100kHz
P1dB
IRL
60
- -10 -
W
dB
Load Mismatch Tolerance
(VDD=26V, IDQ=540mA, POUT=60W
f=1880 MHz)
VSWR
10:1 -
-
CAUTION - MOS Devices are susceptible to damage from ElectroStatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
6
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